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Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes | |
2024-04-29 | |
发表期刊 | NATURE COMMUNICATIONS (IF:14.7[JCR-2023],16.1[5-Year]) |
EISSN | 2041-1723 |
卷号 | 15期号:1 |
发表状态 | 已发表 |
DOI | 10.1038/s41467-024-47958-2 |
摘要 | ["Avalanche or carrier-multiplication effect, based on impact ionization processes in semiconductors, has a great potential for enhancing the performance of photodetector and solar cells. However, in practical applications, it suffers from high threshold energy, reducing the advantages of carrier multiplication. Here, we report on a low-threshold avalanche effect in a stepwise WSe2 structure, in which the combination of weak electron-phonon scattering and high electric fields leads to a low-loss carrier acceleration and multiplication. Owing to this effect, the room-temperature threshold energy approaches the fundamental limit, E thre approximate to E g, where E g is the bandgap of the semiconductor. Our findings offer an alternative perspective on the design and fabrication of future avalanche and hot-carrier photovoltaic devices.","The avalanche or carrier-multiplication effect has the potential to improve the performance of photodetectors and solar cells, but usually requires high threshold energies. Here, the authors report stepwise WSe2 homojunctions exhibiting threshold energies approaching the semiconductor bandgap at room temperature."] |
URL | 查看原文 |
收录类别 | SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China (National Science Foundation of China)["XDB0580000","XDB43010200"] ; Strategic Priority Research Program of the Chinese Academy of Sciences["62327812","11991063","12174416","62304231","12393833","U2241219"] ; National Natural Science Foundation of China[23WZ2500400] ; Shanghai Science and Technology Committee[181331KYSB20200012] ; International Partnership Program of Chinese Academy of Sciences[BX20230390] ; China National Postdoctoral Program for Innovative Talent[2023M733622] |
WOS研究方向 | Science & Technology - Other Topics |
WOS类目 | Multidisciplinary Sciences |
WOS记录号 | WOS:001211127200023 |
出版者 | NATURE PORTFOLIO |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/395917 |
专题 | 物质科学与技术学院 物质科学与技术学院_特聘教授组_陆卫组 |
通讯作者 | Xia, Hui; Hu, Weida; Lu, Wei |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 2601, Australia 4.Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego St, PL-00908 Warsaw, Poland 5.Chinese Univ Hong Kong, Dept Elect Engn, Mat Sci & Technol Res Ctr, Hong Kong, Peoples R China 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China |
通讯作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Wang, Hailu,Xia, Hui,Liu, Yaqian,et al. Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes[J]. NATURE COMMUNICATIONS,2024,15(1). |
APA | Wang, Hailu.,Xia, Hui.,Liu, Yaqian.,Chen, Yue.,Xie, Runzhang.,...&Lu, Wei.(2024).Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes.NATURE COMMUNICATIONS,15(1). |
MLA | Wang, Hailu,et al."Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes".NATURE COMMUNICATIONS 15.1(2024). |
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