上海科技大学知识管理系统

一种用于消除位交错结构下的半选择干扰的超低电压静态随机存取存储器(SRAM)单元，包括交叉耦合反相器对、两个N型写入晶体管NM1和NM2、两个P型写入晶体管PM1和PM2、以及两个N型晶体管NM3和NM4，其中两个N型晶体管NM3和NM4形成读出路径。本公开可以应用于对超低电压下的存储有要求的应用，尤其是对SRAM在低电压下的访问速度和可靠性有一定要求的应用。与其他不同SRAM单元相比，超低压SRAM单元可以在能耗相似的情况下实现更高的读写工作频率。

An ultra-low-voltage static random access memory (SRAM) cell for eliminating half-select-disturbance under a bit interleaving structure includes a cross-coupled inverter pair, two N-type write transistors NM1 and NM2, two P-type write transistors PM1 and PM2, and two N-type transistors NM3 and NM4, where the two N-type transistors NM3 and NM4 form a readout path. The present disclosure can be applied to applications with a storage requirement at an ultra-low voltage, especially applications with certain requirements for an access speed and reliability of an SRAM at a low voltage. Compared with other different SRAM cells, the ultra-low-voltage SRAM cell can achieve higher read and write working frequencies with similar energy consumptions.