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Feasibility of a localized mode analysis method in an SOI platform based on carrier grating | |
2024-06-10 | |
Source Publication | APPLIED OPTICS
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ISSN | 1559-128X |
EISSN | 2155-3165 |
Volume | 63Issue:17Pages:4651-4660 |
Status | 已发表 |
DOI | 10.1364/AO.519201 |
Abstract | In order to measure the intensity of modes that are transmitted inside the devices on the silicon-on-insulator (SOI) platform, researchers usually use pre-processed couplers to make the optical modes diffract out of the chip. However, the output couplers have an influence (e.g., attenuation and wavelength selectivity) on the modes of concern. Besides, as the quantity and variety of devices integrated into the SOI platform continue to escalate, the traditional method also shows limits on detecting devices far from the chip edge. So, is it feasible to directly and locally measure one specific mode’s intensity on some waveguide-based devices like the directional coupler, polarization beam splitter, and so on? Interference of two coherent pump beams has the capability to induce a periodic carrier distribution in the material, thus modulating the refractive index, effectively creating a temporary and erasable diffraction grating. In this study, an off-chip, non-destructive, and localized detection method based on carrier grating is proposed. A theoretical model is developed to calculate carrier dynamics under various pump configurations. Leveraging the finite-difference time-domain (FDTD) method and accounting for free carrier index (FCI) and free carrier absorption (FCA) effects, analysis of the quantitative impact of pump intensity and radius on the diffraction efficiency of the carrier grating in the silicon-on-insulator (SOI) platform and its far-field divergence characteristics is provided. Ultimately, this research contributes to a discussion on several commonly used application scenarios and the feasibility of experimental approaches. A spatial resolution of less than 10 µm and a diffraction efficiency of −15 dB while simultaneously maintaining a far-field divergence of 7.8◦ for the SOI platform are proposed at the end of this article. © 2024 Optica Publishing Group. |
Keyword | Diffraction efficiency Diffraction gratings Refractive index Silicon on insulator technology Analysis method Detecting devices Far field divergence Localized modes Mode analysis Optical modes Output couplers Polarization beamsplitters Silicon-on-insulator platforms Wavelength Selectivity |
URL | 查看原文 |
Indexed By | EI ; SCI |
Language | 英语 |
Funding Project | Science and Technology Commission of Shanghai Municipality[21DZ1101500] |
WOS Research Area | Optics |
WOS Subject | Optics |
WOS ID | WOS:001244553600010 |
Publisher | Optica Publishing Group (formerly OSA) |
EI Accession Number | 20242416258077 |
EI Keywords | Finite difference time domain method |
EI Classification Number | 714.2 Semiconductor Devices and Integrated Circuits ; 741.1 Light/Optics ; 741.3 Optical Devices and Systems ; 921 Mathematics |
Original Document Type | Journal article (JA) |
Document Type | 期刊论文 |
Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/387348 |
Collection | 物质科学与技术学院 物质科学与技术学院_PI研究组_刘晓平组 物质科学与技术学院_硕士生 物质科学与技术学院_本科生 物质科学与技术学院_博士生 |
Corresponding Author | Liu, Xiaoping |
Affiliation | School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China |
First Author Affilication | School of Physical Science and Technology |
Corresponding Author Affilication | School of Physical Science and Technology |
First Signature Affilication | School of Physical Science and Technology |
Recommended Citation GB/T 7714 | Shi, Jinze,Li, Changying,Wang, Qing,et al. Feasibility of a localized mode analysis method in an SOI platform based on carrier grating[J]. APPLIED OPTICS,2024,63(17):4651-4660. |
APA | Shi, Jinze,Li, Changying,Wang, Qing,Wan, Jiajun,&Liu, Xiaoping.(2024).Feasibility of a localized mode analysis method in an SOI platform based on carrier grating.APPLIED OPTICS,63(17),4651-4660. |
MLA | Shi, Jinze,et al."Feasibility of a localized mode analysis method in an SOI platform based on carrier grating".APPLIED OPTICS 63.17(2024):4651-4660. |
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