Feasibility of a localized mode analysis method in an SOI platform based on carrier grating
2024-06-10
Source PublicationAPPLIED OPTICS
ISSN1559-128X
EISSN2155-3165
Volume63Issue:17Pages:4651-4660
Status已发表
DOI10.1364/AO.519201
AbstractIn order to measure the intensity of modes that are transmitted inside the devices on the silicon-on-insulator (SOI) platform, researchers usually use pre-processed couplers to make the optical modes diffract out of the chip. However, the output couplers have an influence (e.g., attenuation and wavelength selectivity) on the modes of concern. Besides, as the quantity and variety of devices integrated into the SOI platform continue to escalate, the traditional method also shows limits on detecting devices far from the chip edge. So, is it feasible to directly and locally measure one specific mode’s intensity on some waveguide-based devices like the directional coupler, polarization beam splitter, and so on? Interference of two coherent pump beams has the capability to induce a periodic carrier distribution in the material, thus modulating the refractive index, effectively creating a temporary and erasable diffraction grating. In this study, an off-chip, non-destructive, and localized detection method based on carrier grating is proposed. A theoretical model is developed to calculate carrier dynamics under various pump configurations. Leveraging the finite-difference time-domain (FDTD) method and accounting for free carrier index (FCI) and free carrier absorption (FCA) effects, analysis of the quantitative impact of pump intensity and radius on the diffraction efficiency of the carrier grating in the silicon-on-insulator (SOI) platform and its far-field divergence characteristics is provided. Ultimately, this research contributes to a discussion on several commonly used application scenarios and the feasibility of experimental approaches. A spatial resolution of less than 10 µm and a diffraction efficiency of −15 dB while simultaneously maintaining a far-field divergence of 7.8◦ for the SOI platform are proposed at the end of this article. © 2024 Optica Publishing Group.
KeywordDiffraction efficiency Diffraction gratings Refractive index Silicon on insulator technology Analysis method Detecting devices Far field divergence Localized modes Mode analysis Optical modes Output couplers Polarization beamsplitters Silicon-on-insulator platforms Wavelength Selectivity
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Indexed ByEI ; SCI
Language英语
Funding ProjectScience and Technology Commission of Shanghai Municipality[21DZ1101500]
WOS Research AreaOptics
WOS SubjectOptics
WOS IDWOS:001244553600010
PublisherOptica Publishing Group (formerly OSA)
EI Accession Number20242416258077
EI KeywordsFinite difference time domain method
EI Classification Number714.2 Semiconductor Devices and Integrated Circuits ; 741.1 Light/Optics ; 741.3 Optical Devices and Systems ; 921 Mathematics
Original Document TypeJournal article (JA)
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/387348
Collection物质科学与技术学院
物质科学与技术学院_PI研究组_刘晓平组
物质科学与技术学院_硕士生
物质科学与技术学院_本科生
物质科学与技术学院_博士生
Corresponding AuthorLiu, Xiaoping
Affiliation
School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China
First Author AffilicationSchool of Physical Science and Technology
Corresponding Author AffilicationSchool of Physical Science and Technology
First Signature AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Shi, Jinze,Li, Changying,Wang, Qing,et al. Feasibility of a localized mode analysis method in an SOI platform based on carrier grating[J]. APPLIED OPTICS,2024,63(17):4651-4660.
APA Shi, Jinze,Li, Changying,Wang, Qing,Wan, Jiajun,&Liu, Xiaoping.(2024).Feasibility of a localized mode analysis method in an SOI platform based on carrier grating.APPLIED OPTICS,63(17),4651-4660.
MLA Shi, Jinze,et al."Feasibility of a localized mode analysis method in an SOI platform based on carrier grating".APPLIED OPTICS 63.17(2024):4651-4660.
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