上海科技大学知识管理系统

2D magnetic semiconductors exhibit great potential for next-generation spintronics, but realizing their full capabilities has been hindered by the low Curie temperatures (T-c) below 50 K observed in current materials. Here, a new mechanism to substantially enhance the T-c of 2D semiconducting materials through incorporating both in-plane and out-of-plane superexchange interactions enabled by structural design is demonstrated. Specifically, monolayer Cr2Se3 is synthesized with a five-layer Se-Cr-Se-Cr-Se atomic structure using molecular beam epitaxy (MBE). This unique structure not only possesses optimized in-plane superexchange interaction but also incorporates out-of-plane Cr-Se-Cr couplings. Scanning tunneling spectroscopy (STS) and angular-resolved photoemission spectroscopy (ARPES) confirm its semiconducting nature. Remarkably, the ferromagnetic phase transition observed by ARPES and Magnetic Force Microscopy (MFM) indicated that its T-c is up to 230 K. This not only establishes a new record for T-c in 2D ferromagnetic semiconductor materials but also introduces a novel approach to modulating materials' properties by manipulating the vertical dimension in 2D materials.