Van der Waals spin-orbit torque antiferromagnetic memory

doi:10.1103/PhysRevB.110.L220409

	Van der Waals spin-orbit torque antiferromagnetic memory
	Zhang, Lishu 1; Yuan, Zhengping2 ; Yang, Jie 3; Zhou, Jun 4; Jiang, Yanyan 5; Li, Hui 5; Cai, Yongqing 6; Tsymbal, Evgeny Y.7; Feng, Yuan Ping 1,8; Zhu, Zhifeng2 ; Shen, Lei 9
	2024-12-20
发表期刊	PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year])
ISSN	2469-9950
EISSN	2469-9969
卷号	110 期号:22
DOI	10.1103/PhysRevB.110.L220409
摘要	The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including shunting effects from the metallic layer, broken symmetry for enabling antidamping switching, spin scattering caused by interfacial defects, and sensitivity to stray magnetic fields. To address these issues, we here propose a van der Waals (vdW) field-free SOT antiferromagnetic memory using a vdW bilayer LaBr2 (an antiferromagnet with perpendicular magnetic anisotropy) and a monolayer Td phase WTe2 (a Weyl semimetal with broken inversion symmetry). By systematically employing density functional theory in conjunction with nonequilibrium Green's function methods and macrospin simulations, we demonstrate that the proposed vdW SOT devices exhibit remarkably low critical current density approximately 10 MA/cm2 and rapid field-free magnetization switching in 250 ps. This facilitates excellent write performance with extremely low energy consumption. Furthermore, the device shows a significantly low read error rate, as evidenced by a high tunnel magnetoresistance ratio of up to 4250%. The superior write and read performance originates from the unique strong on-site (insulating phase) and off-site (magnetic phase) Coulomb interactions in electride LaBr2, a large nonzero z-component polarization in WTe2, and the proximity effect between them.
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收录类别	EI ; SCI
语种	英语
资助项目	Singapore MOE Tier 1[A-8001194-00-00] ; MOE Tier 2[A-8001872-00-00]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001389463600001
出版者	AMER PHYSICAL SOC
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/381266
专题	信息科学与技术学院信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_祝智峰组
通讯作者	Zhang, Lishu; Feng, Yuan Ping; Zhu, Zhifeng; Shen, Lei
作者单位	1.Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore 2.Shanghai Tech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 3.Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450001, Peoples R China 4.AâSTAR Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 138634, Singapore 5.Shandong Univ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Peoples R China 6.Univ Macau, Inst Appl Phys & Mat Engn, Macao, Peoples R China 7.Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA 8.Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 117546, Singapore 9.Natl Univ Singapore, Dept Mech Engn, Singapore 117542, Singapore
通讯作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Lishu,Yuan, Zhengping,Yang, Jie,et al. Van der Waals spin-orbit torque antiferromagnetic memory[J]. PHYSICAL REVIEW B,2024,110(22).
APA	Zhang, Lishu.,Yuan, Zhengping.,Yang, Jie.,Zhou, Jun.,Jiang, Yanyan.,...&Shen, Lei.(2024).Van der Waals spin-orbit torque antiferromagnetic memory.PHYSICAL REVIEW B,110(22).
MLA	Zhang, Lishu,et al."Van der Waals spin-orbit torque antiferromagnetic memory".PHYSICAL REVIEW B 110.22(2024).