Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moire Superlattice

doi:10.1021/acs.nanolett.4c00948

	Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moire Superlattice
	Han, Xiangyan 1; Liu, Qianling 1; Wang, Yijie 2; Niu, Ruirui 1; Qu, Zhuangzhuang 1; Wang, Zhiyu 1; Li, Zhuoxian 1; Han, Chunrui 3,4; Watanabe, Kenji 5; Taniguchi, Takashi 5; Song, Zhida 2; Liu, Jianpeng6,7 ; Mao, Jinhai 8,9; Han, Zheng 10,11; Chittari, Bheema Lingam 14; Jung, Jeil 12,13; Gan, Zizhao 1; Lu, Jianming 1
	2024-05-01
发表期刊	NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year])
ISSN	1530-6984
EISSN	1530-6992
卷号	24 期号:21 页码:6286-6295
发表状态	已发表
DOI	10.1021/acs.nanolett.4c00948
摘要	Moire superlattices have become a fertile playground for topological Chern insulators, where the displacement field can tune the quantum geometry and Chern number of the topological band. However, in experiments, displacement field engineering of spontaneous symmetry-breaking Chern bands has not been demonstrated. Here in a rhombohedral trilayer graphene moire superlattice, we use a thermodynamic probe and transport measurement to monitor the Chern number evolution as a function of the displacement field. At a quarter filling of the moire band, a novel Chern number of three is unveiled to compete with the well-established number of two upon turning on the electric field and survives when the displacement field is sufficiently strong. The transition can be reconciled by a nematic instability on the Fermi surface due to the pseudomagnetic vector field potentials associated with moire strain patterns. Our work opens more opportunities to active control of Chern numbers in van der Waals moire systems.
关键词	rhombohedral trilayer graphene moire superlattice Chern insulator electric field driven topological transition chemical potential
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	NSF of China[
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001226032900001
出版者	AMER CHEMICAL SOC
EI入藏号	20242116118929
EI主题词	Graphene
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 761 Nanotechnology ; 801.4 Physical Chemistry ; 804 Chemical Products Generally ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931.3 Atomic and Molecular Physics
原始文献类型	Article in Press
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/381243
专题	物质科学与技术学院物质科学与技术学院_PI研究组_刘健鹏组
通讯作者	Chittari, Bheema Lingam; Jung, Jeil; Lu, Jianming
作者单位	1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 2.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Natl Inst Mat Sci, Tsukuba 3050044, Japan 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 7.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China 8.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China 9.Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100049, Peoples R China 10.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 11.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 12.Univ Seoul, Dept Phys, Seoul 02504, South Korea 13.Univ Seoul, Dept Smart Cities, Seoul 02504, South Korea 14.Indian Inst Sci Educ & Res Kolkata, Dept Phys Sci, Mohanpur 741246, West Bengal, India
推荐引用方式 GB/T 7714	Han, Xiangyan,Liu, Qianling,Wang, Yijie,et al. Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moire Superlattice[J]. NANO LETTERS,2024,24(21):6286-6295.
APA	Han, Xiangyan.,Liu, Qianling.,Wang, Yijie.,Niu, Ruirui.,Qu, Zhuangzhuang.,...&Lu, Jianming.(2024).Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moire Superlattice.NANO LETTERS,24(21),6286-6295.
MLA	Han, Xiangyan,et al."Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moire Superlattice".NANO LETTERS 24.21(2024):6286-6295.