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| Spin injection into heavily-doped n-GaN via Schottky barrier | |
| 2023-08-10 | |
| 发表期刊 | JOURNAL OF SEMICONDUCTORS (IF:4.8[JCR-2023],3.3[5-Year]) |
| ISSN | 1674-4926 |
| 卷号 | 44期号:8 |
| 发表状态 | 已发表 |
| 收录类别 | EI |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/375682 |
| 专题 | 物质科学与技术学院_博士生 |
| 通讯作者 | Ning Tang |
| 作者单位 | 1.State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 2.Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter, Peking University 3.Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences 4.International Center for Quantum Materials, Peking University |
| 推荐引用方式 GB/T 7714 | Zhenhao Sun,Ning Tang,Shuaiyu Chen,et al. Spin injection into heavily-doped n-GaN via Schottky barrier[J]. JOURNAL OF SEMICONDUCTORS,2023,44(8). |
| APA | Zhenhao Sun.,Ning Tang.,Shuaiyu Chen.,Fan Zhang.,Haoran Fan.,...&Bo Shen.(2023).Spin injection into heavily-doped n-GaN via Schottky barrier.JOURNAL OF SEMICONDUCTORS,44(8). |
| MLA | Zhenhao Sun,et al."Spin injection into heavily-doped n-GaN via Schottky barrier".JOURNAL OF SEMICONDUCTORS 44.8(2023). |
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| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
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