上海科技大学知识管理系统

High-quality semiconductor single crystal materials play a significant role in achieving excellent photoelectric performance, fundamental to high-performance X-ray detectors. To mitigate the impact of temperature gradients and auxiliary substances, we developed a vacuum evaporation crystallization method. This method synthesizes high-quality MAPbBr(3) single crystals with outstanding photoelectric properties, including a long carrier lifetime (1150 ns), low trap-state density (2.28 x 10(9) cm(-3)), and high carrier mobility (130 cm(2) V-1 s(-1)). A planar MAPbBr(3)/Pt structure for an X-ray detector was designed and constructed, demonstrating a superior detection sensitivity of 24 552 mu C Gy(-1) cm(-2) and an ultralow detection limit of 54 nGy s(-1). Furthermore, even after being stored in ambient air at room temperature for 200 days, the unencapsulated detector retained 97.1% of its original photocurrent response under a dose rate of 21.09 mu Gy s(-1). These results indicate that high-quality MAPbBr(3) single crystals are promising candidates for high-performance X-ray detectors.