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Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5 | |
2024 | |
发表期刊 | ADVANCED MATERIALS (IF:27.4[JCR-2023],30.2[5-Year]) |
ISSN | 0935-9648 |
EISSN | 1521-4095 |
卷号 | 36期号:27 |
发表状态 | 已发表 |
DOI | 10.1002/adma.202401118 |
摘要 | As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law free variables (F) = components (C) – phases (P) + 2. When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, the sharp phase boundary is expanded to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline–amorphous–crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in situ synchrotron diffraction, it is elucidated that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2− trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25% increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, a theoretical framework is proposed revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries. © 2024 Wiley-VCH GmbH. |
关键词 | Carrier concentration Crystal symmetry Indium compounds Phase diagrams Single crystals Superconducting transition temperature Tellurium compounds Amorphization and recrystallization Amorphizations Component C Free variable High pressure Iconics Materials science and engineering Recrystallisation Superconductivity enhancement Topological characteristics |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | Natural Science Foundation of Jiangsu Province[52272265] ; National Natural Science Foundation of China[2022YFA1403700] ; National Key R&D Program of China[ |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:001214984600001 |
出版者 | John Wiley and Sons Inc |
EI入藏号 | 20241816013776 |
EI主题词 | Amorphization |
EI分类号 | 701.1 Electricity: Basic Concepts and Phenomena ; 708.3 Superconducting Materials ; 802.3 Chemical Operations ; 933.1 Crystalline Solids ; 933.1.1 Crystal Lattice |
原始文献类型 | Article in Press |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/370136 |
专题 | 物质科学与技术学院 物质科学与技术学院_特聘教授组_陈宇林 物质科学与技术学院_公共科研平台_分析测试平台 物质科学与技术学院_PI研究组_齐彦鹏组 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 |
共同第一作者 | Ying, Tianping; Zhao, Lingxiao; Wu, Juefei |
通讯作者 | Ying, Tianping; Chen, Chui-Zhen; Qi, Yanpeng |
作者单位 | 1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 2.Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing; 100190, China 3.Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing; 100084, China 4.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China 5.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201203, China 6.Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford; OX1 3PU, United Kingdom 7.Institute for Advanced Study and School of Physical Science and Technology, Soochow University, Suzhou; 215006, China 8.Suzhou Laboratory, Jiangsu, Suzhou; 215123, China 9.Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai; 201210, China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院; 上海科技大学 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhao, Yi,Ying, Tianping,Zhao, Lingxiao,et al. Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5[J]. ADVANCED MATERIALS,2024,36(27). |
APA | Zhao, Yi.,Ying, Tianping.,Zhao, Lingxiao.,Wu, Juefei.,Pei, Cuiying.,...&Qi, Yanpeng.(2024).Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5.ADVANCED MATERIALS,36(27). |
MLA | Zhao, Yi,et al."Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5".ADVANCED MATERIALS 36.27(2024). |
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