Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5
2024
发表期刊ADVANCED MATERIALS (IF:27.4[JCR-2023],30.2[5-Year])
ISSN0935-9648
EISSN1521-4095
卷号36期号:27
发表状态已发表
DOI10.1002/adma.202401118
摘要

As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law free variables (F) = components (C) – phases (P) + 2. When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, the sharp phase boundary is expanded to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline–amorphous–crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in situ synchrotron diffraction, it is elucidated that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2− trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25% increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, a theoretical framework is proposed revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries. © 2024 Wiley-VCH GmbH.

关键词Carrier concentration Crystal symmetry Indium compounds Phase diagrams Single crystals Superconducting transition temperature Tellurium compounds Amorphization and recrystallization Amorphizations Component C Free variable High pressure Iconics Materials science and engineering Recrystallisation Superconductivity enhancement Topological characteristics
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收录类别SCI ; EI
语种英语
资助项目Natural Science Foundation of Jiangsu Province[52272265] ; National Natural Science Foundation of China[2022YFA1403700] ; National Key R&D Program of China[
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:001214984600001
出版者John Wiley and Sons Inc
EI入藏号20241816013776
EI主题词Amorphization
EI分类号701.1 Electricity: Basic Concepts and Phenomena ; 708.3 Superconducting Materials ; 802.3 Chemical Operations ; 933.1 Crystalline Solids ; 933.1.1 Crystal Lattice
原始文献类型Article in Press
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/370136
专题物质科学与技术学院
物质科学与技术学院_特聘教授组_陈宇林
物质科学与技术学院_公共科研平台_分析测试平台
物质科学与技术学院_PI研究组_齐彦鹏组
物质科学与技术学院_硕士生
物质科学与技术学院_博士生
物质科学与技术学院_公共科研平台_拓扑物理实验室
共同第一作者Ying, Tianping; Zhao, Lingxiao; Wu, Juefei
通讯作者Ying, Tianping; Chen, Chui-Zhen; Qi, Yanpeng
作者单位
1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China
2.Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing; 100190, China
3.Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing; 100084, China
4.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China
5.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201203, China
6.Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford; OX1 3PU, United Kingdom
7.Institute for Advanced Study and School of Physical Science and Technology, Soochow University, Suzhou; 215006, China
8.Suzhou Laboratory, Jiangsu, Suzhou; 215123, China
9.Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai; 201210, China
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院;  上海科技大学
第一作者的第一单位物质科学与技术学院
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GB/T 7714
Zhao, Yi,Ying, Tianping,Zhao, Lingxiao,et al. Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5[J]. ADVANCED MATERIALS,2024,36(27).
APA Zhao, Yi.,Ying, Tianping.,Zhao, Lingxiao.,Wu, Juefei.,Pei, Cuiying.,...&Qi, Yanpeng.(2024).Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5.ADVANCED MATERIALS,36(27).
MLA Zhao, Yi,et al."Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5".ADVANCED MATERIALS 36.27(2024).
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