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Topological origin of antichiral edge states induced by a nonchiral phonon | |
2024-04-08 | |
发表期刊 | PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year]) |
ISSN | 2469-9969 |
EISSN | 2469-9969 |
卷号 | 109期号:15 |
发表状态 | 已发表 |
DOI | 10.1103/PhysRevB.109.155410 |
摘要 | In contrast to the chiral edge modes, the antichiral edge modes propagate in the same direction along two parallel boundaries, representing a new state that provides more possibility for the dissipationless transportation of information. In a recent work by Medina Dueñas et al. [Phys. Rev. Lett. 128, 066801 (2022)0031-900710.1103/PhysRevLett.128.066801], a chiral phonon was shown to induce antichiral edge states on the zigzag edges of a honeycomb lattice through electron-phonon interaction (EPI). In this work we demonstrate that the EPI can promise antichiral edge modes even without the chirality of the phonon at K/K′. To illustrate this, we consider a model of EPI with a nonchiral phonon and show that antichiral edge states appear independent of the phonon chirality. The antichiral edge modes carry quantized Zak phases if the model further respects the combination of time reversal (T) and inversion (I), i.e., TI. Our work successfully extends the EPI-induced antichiral edge modes to the nonchiral phonon case, significantly increasing the experimental feasibility on realizing antichiral edge states in realistic materials. © 2024 American Physical Society. |
关键词 | Chirality Honeycomb structures A: Honeycomb Edge state Honeycomb lattices Realistic materials Time-reversal Zigzag edges |
URL | 查看原文 |
收录类别 | EI ; SCI |
语种 | 英语 |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:001247399100005 |
出版者 | American Physical Society |
EI入藏号 | 20241515910786 |
EI主题词 | Electron-phonon interactions |
EI分类号 | 408.2 Structural Members and Shapes ; 931.3 Atomic and Molecular Physics ; 931.4 Quantum Theory ; Quantum Mechanics ; 933 Solid State Physics |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/364638 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_李刚组 物质科学与技术学院_博士生 |
通讯作者 | Su YL(苏云龙) |
作者单位 | 1.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 2.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Su YL,Li G. Topological origin of antichiral edge states induced by a nonchiral phonon[J]. PHYSICAL REVIEW B,2024,109(15). |
APA | Su YL,&Li G.(2024).Topological origin of antichiral edge states induced by a nonchiral phonon.PHYSICAL REVIEW B,109(15). |
MLA | Su YL,et al."Topological origin of antichiral edge states induced by a nonchiral phonon".PHYSICAL REVIEW B 109.15(2024). |
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