Topological origin of antichiral edge states induced by a nonchiral phonon
2024-04-08
发表期刊PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year])
ISSN2469-9969
EISSN2469-9969
卷号109期号:15
发表状态已发表
DOI10.1103/PhysRevB.109.155410
摘要

In contrast to the chiral edge modes, the antichiral edge modes propagate in the same direction along two parallel boundaries, representing a new state that provides more possibility for the dissipationless transportation of information. In a recent work by Medina Dueñas et al. [Phys. Rev. Lett. 128, 066801 (2022)0031-900710.1103/PhysRevLett.128.066801], a chiral phonon was shown to induce antichiral edge states on the zigzag edges of a honeycomb lattice through electron-phonon interaction (EPI). In this work we demonstrate that the EPI can promise antichiral edge modes even without the chirality of the phonon at K/K′. To illustrate this, we consider a model of EPI with a nonchiral phonon and show that antichiral edge states appear independent of the phonon chirality. The antichiral edge modes carry quantized Zak phases if the model further respects the combination of time reversal (T) and inversion (I), i.e., TI. Our work successfully extends the EPI-induced antichiral edge modes to the nonchiral phonon case, significantly increasing the experimental feasibility on realizing antichiral edge states in realistic materials. © 2024 American Physical Society.

关键词Chirality Honeycomb structures A: Honeycomb Edge state Honeycomb lattices Realistic materials Time-reversal Zigzag edges
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收录类别EI ; SCI
语种英语
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:001247399100005
出版者American Physical Society
EI入藏号20241515910786
EI主题词Electron-phonon interactions
EI分类号408.2 Structural Members and Shapes ; 931.3 Atomic and Molecular Physics ; 931.4 Quantum Theory ; Quantum Mechanics ; 933 Solid State Physics
原始文献类型Journal article (JA)
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/364638
专题物质科学与技术学院
物质科学与技术学院_PI研究组_李刚组
物质科学与技术学院_博士生
通讯作者Su YL(苏云龙)
作者单位
1.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
2.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院
第一作者的第一单位物质科学与技术学院
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GB/T 7714
Su YL,Li G. Topological origin of antichiral edge states induced by a nonchiral phonon[J]. PHYSICAL REVIEW B,2024,109(15).
APA Su YL,&Li G.(2024).Topological origin of antichiral edge states induced by a nonchiral phonon.PHYSICAL REVIEW B,109(15).
MLA Su YL,et al."Topological origin of antichiral edge states induced by a nonchiral phonon".PHYSICAL REVIEW B 109.15(2024).
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