Low-Threshold Anti-Stokes Raman Microlaser on Thin-Film Lithium Niobate Chip

doi:10.3390/ma17051042

	Low-Threshold Anti-Stokes Raman Microlaser on Thin-Film Lithium Niobate Chip
	Guan, Jianglin 1,2; Lin, Jintian 3,4; Gao, Renhong 2,3; Li, Chuntao 1,2; Zhao, Guanghui3,5 ; Li, Minghui 3,4; Wang, Min 2; Qiao, Lingling 3; Cheng, Ya 1,2,3,6,7,8,9
	2024-03
发表期刊	MATERIALS (IF:3.1[JCR-2023],3.4[5-Year])
EISSN	1996-1944
卷号	17 期号:5
DOI	10.3390/ma17051042
摘要	Raman microlasers form on-chip versatile light sources by optical pumping, enabling numerical applications ranging from telecommunications to biological detection. Stimulated Raman scattering (SRS) lasing has been demonstrated in optical microresonators, leveraging high Q factors and small mode volume to generate downconverted photons based on the interaction of light with the Stokes vibrational mode. Unlike redshifted SRS, stimulated anti-Stokes Raman scattering (SARS) further involves the interplay between the pump photon and the SRS photon to generate an upconverted photon, depending on a highly efficient SRS signal as an essential prerequisite. Therefore, achieving SARS in microresonators is challenging due to the low lasing efficiencies of integrated Raman lasers caused by intrinsically low Raman gain. In this work, high-Q whispering gallery microresonators were fabricated by femtosecond laser photolithography assisted chemo-mechanical etching on thin-film lithium niobate (TFLN), which is a strong Raman-gain photonic platform. The high Q factor reached 4.42 × 106, which dramatically increased the circulating light intensity within a small volume. And a strong Stokes vibrational frequency of 264 cm−1 of lithium niobate was selectively excited, leading to a highly efficient SRS lasing signal with a conversion efficiency of 40.6%. And the threshold for SRS was only 0.33 mW, which is about half the best record previously reported on a TFLN platform. The combination of high Q factors, a small cavity size of 120 μm, and the excitation of a strong Raman mode allowed the formation of SARS lasing with only a 0.46 mW pump threshold. © 2024 by the authors.
关键词	Conversion efficiency Etching Lithium Microresonators Niobium compounds Optical pumping Optical resonators Photons Q factor measurement Thin films Whispering gallery modes Anti-stokes Raman scattering High Q factor High-Q factor Lasings Lithium niobate Micro resonators Optical microcavities Raman microlasers Stimulated anti-stoke raman scattering Thin-films
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收录类别	EI
语种	英语
出版者	Multidisciplinary Digital Publishing Institute (MDPI)
EI入藏号	20241215762050
EI主题词	Stimulated Raman scattering
EI分类号	525.5 Energy Conversion Issues ; 542.4 Lithium and Alloys ; 549.1 Alkali Metals ; 711 Electromagnetic Waves ; 714.3 Waveguides ; 741.1 Light/Optics ; 741.3 Optical Devices and Systems ; 744.7 Laser Components ; 802.2 Chemical Reactions ; 931.3 Atomic and Molecular Physics ; 942.2 Electric Variables Measurements
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/359920
专题	物质科学与技术学院物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Lin, Jintian; Cheng, Ya
作者单位	1.State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai; 200241, China; 2.The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai; 200241, China; 3.State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai; 201800, China; 4.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China; 5.School of Physical Science and Technology, Shanghai Tech University, Shanghai; 200031, China; 6.Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan; 030006, China; 7.Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan; 250358, China; 8.Shanghai Research Center for Quantum Sciences, Shanghai; 201315, China; 9.Hefei National Laboratory, Hefei; 230088, China
推荐引用方式 GB/T 7714	Guan, Jianglin,Lin, Jintian,Gao, Renhong,et al. Low-Threshold Anti-Stokes Raman Microlaser on Thin-Film Lithium Niobate Chip[J]. MATERIALS,2024,17(5).
APA	Guan, Jianglin.,Lin, Jintian.,Gao, Renhong.,Li, Chuntao.,Zhao, Guanghui.,...&Cheng, Ya.(2024).Low-Threshold Anti-Stokes Raman Microlaser on Thin-Film Lithium Niobate Chip.MATERIALS,17(5).
MLA	Guan, Jianglin,et al."Low-Threshold Anti-Stokes Raman Microlaser on Thin-Film Lithium Niobate Chip".MATERIALS 17.5(2024).