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ShanghaiTech University Knowledge Management System
Pt/GO/TiO2 room–temperature hydrogen sensing Schottky diode: High resistance to humidity interference endowed by the graphene oxide interlayer | |
2024-06-01 | |
发表期刊 | SENSORS AND ACTUATORS B: CHEMICAL (IF:8.0[JCR-2023],7.0[5-Year]) |
ISSN | 0925-4005 |
EISSN | 0925-4005 |
卷号 | 408 |
发表状态 | 已发表 |
DOI | 10.1016/j.snb.2024.135569 |
摘要 | Room–temperature hydrogen sensors usually suffer from dramatic response drop in humid air. Aiming to solve such issue of H2 sensing Schottky diodes, a platinum/graphene oxide/titanium dioxide (Pt/GO/TiO2) Schottky diode is designed. The GO interlayer between the 50–nm–thick Pt nanolayer and TiO2 substrate significantly improves resistance to humidity interference. Remarkably, the diode with a GO loading of 0.969 mg cm−2 exhibits a response retention rate (RRH95%/Rdry) of nearly 100%. To reveal the mechanism for the improved anti–humidity performance, the H2O adsorption behavior of Pt/GO/TiO2 diode was investigated by quartz crystal microbalance and near ambient pressure X–ray photoelectron spectroscopy. H2O molecules are absent on the Pt surface of Pt/GO/TiO2 in water vapor. This is a result of the H2O adsorption effect of the GO interlayer, which stems from the superior H2O adsorption ability of the GO interlayer and causes the diffusion of H2O molecules adsorbed on the Pt surface into the GO interlayer through nanochannels in the Pt nanolayer. Additionally, the GO interlayer serves as a blocking layer for the diffusion of hydroxyl species generated on the TiO2 surface to the Pt nanolayer. Such hydroxyl blocking effect prevents the consumption of adsorbed H atoms at the Pt/GO interface. © 2024 Elsevier B.V. |
关键词 | Adsorption Diodes Graphene Hydrogen Molecules Photoelectrons Photons Platinum Platinum compounds Quartz Quartz crystal microbalances Schottky barrier diodes Titanium dioxide Ambient pressures Graphene oxide interlayer Graphene oxides High resistance Humidity interference Hydrogen sensor Hydrogen-sensing Nano layers Near ambient pressure X-ray photoelectron spectroscopy Schottky diodes |
URL | 查看原文 |
收录类别 | EI ; SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China["21991152","21991150","21603048","52372142"] ; National Key R & D Program of China[2022YFA1503803] |
WOS研究方向 | Chemistry ; Electrochemistry ; Instruments & Instrumentation |
WOS类目 | Chemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation |
WOS记录号 | WOS:001208382200001 |
出版者 | Elsevier B.V. |
EI入藏号 | 20241015679453 |
EI主题词 | X ray photoelectron spectroscopy |
EI分类号 | 482.2 Minerals ; 547.1 Precious Metals ; 711 Electromagnetic Waves ; 714.2 Semiconductor Devices and Integrated Circuits ; 761 Nanotechnology ; 802.3 Chemical Operations ; 804 Chemical Products Generally ; 804.2 Inorganic Compounds ; 931.3 Atomic and Molecular Physics ; 943.3 Special Purpose Instruments |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/352536 |
专题 | 物质科学与技术学院 物质科学与技术学院_博士生 |
通讯作者 | Liu, Zhi; Fang, Haitao |
作者单位 | 1.School of Materials Science and Engineering, Harbin Institute of Technology, Harbin; 150001, China; 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai; 200050, China; 3.Center for Transformative Science, ShanghaiTech University, Shanghai; 201210, China; 4.School of Physical science and Technology, ShanghaiTech University, Shanghai; 201210, China; 5.Shanghai High Repetition Rate XFEL and Extreme Light Facility (SHINE), ShanghaiTech University, Shanghai; 201210, China |
通讯作者单位 | 上海科技大学; 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Li, Ruiwu,Xu, Ziqin,Mao, Baohua,et al. Pt/GO/TiO2 room–temperature hydrogen sensing Schottky diode: High resistance to humidity interference endowed by the graphene oxide interlayer[J]. SENSORS AND ACTUATORS B: CHEMICAL,2024,408. |
APA | Li, Ruiwu.,Xu, Ziqin.,Mao, Baohua.,Xie, Guomeng.,Wang, You.,...&Fang, Haitao.(2024).Pt/GO/TiO2 room–temperature hydrogen sensing Schottky diode: High resistance to humidity interference endowed by the graphene oxide interlayer.SENSORS AND ACTUATORS B: CHEMICAL,408. |
MLA | Li, Ruiwu,et al."Pt/GO/TiO2 room–temperature hydrogen sensing Schottky diode: High resistance to humidity interference endowed by the graphene oxide interlayer".SENSORS AND ACTUATORS B: CHEMICAL 408(2024). |
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