Nonreciprocal charge-density-wave proximity effect in a lateral heterojunction of NbSe2/TiSe2

doi:10.1063/5.0190698

	Nonreciprocal charge-density-wave proximity effect in a lateral heterojunction of NbSe2/TiSe2
	Akber, Humaira 1,2; Shan, Huan 3; Mao, Yahui 4; Yao, Jie 2,4; Zhai, Xiaofang2 ; Zhao, Aidi2
	2024-02-12
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	124 期号:7
DOI	10.1063/5.0190698
摘要	Lateral heterostructures between two-dimensional (2D) transition metal dichalcogenides are highly interesting since they have potential applications for constructing monolayer electronic devices. Such in-plane heterostructures are also ideal systems for exploring the interfacial effects on quantum phases, such as charge-density wave (CDW) order in the true 2D limit. Here, we report on a lateral CDW heterojunction made of monolayer NbSe2 and TiSe2 with atomically sharp interface. Scanning tunneling microscopy reveals an unexpectedly nonreciprocal CDW proximity effect at the NbSe2 vicinity of the heterojunctions: the (2 × 2) CDW order of TiSe2 is found to propagate into the NbSe2 side of the heterostructure, while the (3 × 3) CDW order of NbSe2 resides in the NbSe2 side. Such a nonreciprocal CDW proximity effect indicates that the quantum phase of electrons in NbSe2 can be easily tuned by the adjacent TiSe2. Our study highlights the significance of quantum interfacial effect in lateral heterojunctions, which may help for constructing tunable 2D in-plane quantum devices based on proximity effects or in-plane interfaces. © 2024 Author(s).
关键词	Charge density Charge density waves Heterojunctions Monolayers Niobium compounds Scanning tunneling microscopy Titanium compounds Transition metals Atomically sharp interface Charge-density-waves Dichalcogenides Electronics devices Ideal systems Interfacial effects Nonreciprocal Proximity effects Quantum phase Two-dimensional
URL	查看原文
收录类别	EI
语种	英语
出版者	American Institute of Physics Inc.
EI入藏号	20240815570928
EI主题词	Selenium compounds
EI分类号	531 Metallurgy and Metallography ; 701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits
原始文献类型	Journal article (JA)
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/349965
专题	物质科学与技术学院物质科学与技术学院_PI研究组_赵爱迪组物质科学与技术学院_PI研究组_翟晓芳组
通讯作者	Shan, Huan; Zhao, Aidi
作者单位	1.Department of Physics, University of Science and Technology of China, Anhui, Hefei; 230026, China; 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 3.Institute of Physics, Chinese Academy of Sciences, Beijing; 100190, China; 4.Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Anhui, Hefei; 230026, China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Akber, Humaira,Shan, Huan,Mao, Yahui,et al. Nonreciprocal charge-density-wave proximity effect in a lateral heterojunction of NbSe2/TiSe2[J]. APPLIED PHYSICS LETTERS,2024,124(7).
APA	Akber, Humaira,Shan, Huan,Mao, Yahui,Yao, Jie,Zhai, Xiaofang,&Zhao, Aidi.(2024).Nonreciprocal charge-density-wave proximity effect in a lateral heterojunction of NbSe2/TiSe2.APPLIED PHYSICS LETTERS,124(7).
MLA	Akber, Humaira,et al."Nonreciprocal charge-density-wave proximity effect in a lateral heterojunction of NbSe2/TiSe2".APPLIED PHYSICS LETTERS 124.7(2024).