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Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7 | |
2024-01-29 | |
发表期刊 | APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year]) |
ISSN | 0003-6951 |
卷号 | 124期号:5 |
发表状态 | 已发表 |
DOI | 10.1063/5.0187830 |
摘要 | The realization of intrinsic magnetic topological insulators offers an ideal platform to investigate high-temperature quantum anomalous Hall effect as well as quantum devices. The family of MnBi2Te4(Bi2Te3)n has been confirmed that it belongs to this system. However, whether there is a bandgap in the surface states remains controversial. In this work, the ferromagnetism in Sb-doped MnBi4Te7 is confirmed by magnetic transport. Utilizing angle-resolved photoemission spectroscopy, we demonstrate the nontrivial topology in Mn(Bi0.7Sb0.3)4Te7 with an energy gap on the MnBi2Te4 termination. As well, we detect distinct topological surface states on two different terminations. Our results provide spectral evidence of an energy gap in the topological surface states. © 2024 Author(s). |
关键词 | Antimony compounds Bismuth compounds Energy gap Manganese compounds Photoelectron spectroscopy Quantum Hall effect Tellurium compounds Topology Angle resolved photoemission spectroscopy Anomalous hall effects Hall-effect devices Highest temperature Magnetic transport Nontrivial topology Quantum device Sb-doped Topological insulators |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
出版者 | American Institute of Physics Inc. |
EI入藏号 | 20240615511571 |
EI主题词 | Surface states |
EI分类号 | 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931 Classical Physics ; Quantum Theory ; Relativity ; 932 High Energy Physics ; Nuclear Physics ; Plasma Physics |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/349731 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_郭艳峰组 物质科学与技术学院_博士生 |
共同第一作者 | Jiang, Zhicheng; Chen, Bo; Tao, Zicheng |
通讯作者 | Fei, Fucong; Liu, Jishan; Shen, Dawei |
作者单位 | 1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China 2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China 3.National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei; 230026, China 4.National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Physics, Nanjing University, Nanjing; 210093, China 5.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 6.Institute of High-Pressure Physics, School of Physical Science and Technology, Ningbo University, Ningbo; 315211, China 7.Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China 8.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201210, China 9.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China 10.School of Materials Science and Intelligent Engineering, Nanjing University, Suzhou; 215163, China |
推荐引用方式 GB/T 7714 | Qiao, Yuxi,Jiang, Zhicheng,Chen, Bo,et al. Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7[J]. APPLIED PHYSICS LETTERS,2024,124(5). |
APA | Qiao, Yuxi.,Jiang, Zhicheng.,Chen, Bo.,Tao, Zicheng.,Liu, Zhonghao.,...&Shen, Dawei.(2024).Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7.APPLIED PHYSICS LETTERS,124(5). |
MLA | Qiao, Yuxi,et al."Experimental observation of gapped topological surface states in Sb-doped MnBi4Te7".APPLIED PHYSICS LETTERS 124.5(2024). |
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