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| Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2 | |
Tian, Ning1,2,3,4,5; Huang, Zhe6,7  ; Jang, Bo Gyu8; Guo, Shuaifei1,2,3,4,5; Yan, Ya-Jun9; Gao, Jingjing1,2,3,4,5; Yu, Yijun1,2,3,4,5; Hwang, Jinwoong10; Tang, Cenyao1,2,3,4,5; Wang, Meixiao7,11; Luo, Xuan12; Sun, Yu Ping12,13,14; Liu, Zhongkai7,11; Feng, Dong-Lai9; Chen, Xianhui15; Mo, Sung-Kwan10; Kim, Minjae8; Son, Young-Woo8; Shen, Dawei6,16; Ruan, Wei1,3,4,5; Zhang, Yuanbo1,2,3,4,5
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| 2024-03-01 | |
| 发表期刊 | NATIONAL SCIENCE REVIEW (IF:16.3[JCR-2023],18.6[5-Year]) |
| ISSN | 2095-5138 |
| EISSN | 2053-714X |
| 卷号 | 11期号:3 |
| DOI | 10.1093/nsr/nwad144 |
| 摘要 | Two-dimensional materials represent a major frontier for research into exotic many-body quantum phenomena. In the extreme two-dimensional limit, electron-electron interaction often dominates over other electronic energy scales, leading to strongly correlated effects such as quantum spin liquid and unconventional superconductivity. The dominance is conventionally attributed to the lack of electron screening in the third dimension. Here, we discover an intriguing metal to Mott insulator transition in 1T-TaSe2 that defies conventional wisdom. Specifically, we find that dimensionality crossover, instead of reduced screening, drives the transition in atomically thin 1T-TaSe2. A dispersive band crossing the Fermi level is found to be responsible for the bulk metallicity in the material. Reducing the dimensionality, however, effectively quenches the kinetic energy of these initially itinerant electrons, and drives the material into a Mott insulating state. The dimensionality-driven metal to Mott insulator transition resolves the long-standing dichotomy between metallic bulk and insulating surface of 1T-TaSe2. Our work further reveals a new pathway for modulating two-dimensional materials that enables exploring strongly correlated systems across uncharted parameter space. © The Author(s) 2023. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd. |
| 关键词 | Electron-electron interactions Electrons Kinetics Metal insulator transition Mott insulators 1t-tase2 Dimensionality crossover Electron-electron-interactions Electronic energies Many body Metal to mott insulator transition Mott-insulator transition Quantum phenomena Two-dimensional Two-dimensional materials |
| URL | 查看原文 |
| 收录类别 | EI ; SCIE |
| 语种 | 英语 |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| WOS记录号 | WOS:001128446400001 |
| 出版者 | Oxford University Press |
| EI入藏号 | 20240615523527 |
| EI主题词 | Kinetic energy |
| EI分类号 | 413.1 Electric Insulating Materials ; 631.1 Fluid Flow, General ; 931 Classical Physics ; Quantum Theory ; Relativity ; 931.3 Atomic and Molecular Physics |
| 原始文献类型 | Journal article (JA) |
| 来源库 | WOS |
| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/349719 |
| 专题 | 物质科学与技术学院 上海科技大学 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_博士生 大科学中心_公共科研平台_大科学装置建设部 |
| 通讯作者 | Son, Young-Woo; Shen, Dawei; Ruan, Wei; Zhang, Yuanbo |
| 作者单位 | 1.State Key Laboratory of Surface Physics, New Cornerstone Science Laboratory, Department of Physics, Fudan University, Shanghai; 200438, China 2.Shanghai Qi Zhi Institute, Shanghai; 200232, China 3.Shanghai Research Center for Quantum Sciences, Shanghai; 201315, China 4.Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai; 200433, China 5.Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai; 201210, China 6.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai; 200050, China 7.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 8.Korea Institute for Advanced Study, Seoul; 02455, Korea, Republic of 9.School of Emerging Technology, Department of Physics, University of Science and Technology of China, Hefei; 230026, China 10.Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley; CA; 94720, United States 11.ShanghaiTech Laboratory for Topological Physics, Shanghai; 200031, China 12.Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei; 230031, China 13.High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei; 230031, China 14.Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing; 210093, China 15.Department of Physics, University of Science and Technology of China, Key Laboratory of Strongly Coupled Quantum Matter Physics, Chinese Academy of Sciences, Hefei; 230026, China 16.National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei; 230029, China |
| 推荐引用方式 GB/T 7714 | Tian, Ning,Huang, Zhe,Jang, Bo Gyu,et al. Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2[J]. NATIONAL SCIENCE REVIEW,2024,11(3). |
| APA | Tian, Ning.,Huang, Zhe.,Jang, Bo Gyu.,Guo, Shuaifei.,Yan, Ya-Jun.,...&Zhang, Yuanbo.(2024).Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2.NATIONAL SCIENCE REVIEW,11(3). |
| MLA | Tian, Ning,et al."Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2".NATIONAL SCIENCE REVIEW 11.3(2024). |
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