Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy

doi:10.3390/nano14010034

	Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy
	Dou, Hongbin1,2 ; Yuan, Chunze1,2 ; Zhu, Ruixue2 ; Li, Lin1,2 ; Zhang, Jihao1,2 ; Weng, Tsu-Chien1,2
	2024
发表期刊	NANOMATERIALS
EISSN	2079-4991
卷号	14 期号:1
发表状态	已发表
DOI	10.3390/nano14010034
摘要	The presence of surface trap states (STSs) is one of the key factors to affect the electronic and optical properties of quantum dots (QDs), however, the exact mechanism of how STSs influence QDs remains unclear. Herein, we demonstrated the impact of STSs on electron transfer in CdSe QDs and triplet-triplet energy transfer (TTET) from CdSe to surface acceptor using femtosecond transient absorption spectroscopy. Three types of colloidal CdSe QDs, each containing various degrees of STSs as evidenced by photoluminescence and X-ray photoelectron spectroscopy, were employed. Time-resolved emission and transient absorption spectra revealed that STSs can suppress band-edge emission effectively, resulting in a remarkable decrease in the lifetime of photoelectrons in QDs from 17.1 ns to 4.9 ns. Moreover, the investigation of TTET process revealed that STSs can suppress the generation of triplet exciton and effectively inhibit band-edge emission, leading to a significant decrease in TTET from CdSe QDs to the surface acceptor. This work presented evidence for STSs influence in shaping the optoelectronic properties of QDs, making it a valuable point of reference for understanding and manipulating STSs in diverse QDs-based optoelectronic applications involving electron and energy transfer.
关键词	quantum dots surface trap states transient absorption photoelectron transfer triplet-triplet energy transfer
URL	查看原文
收录类别	SCI
语种	英语
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001140415600001
出版者	MDPI
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/349690
专题	物质科学与技术学院物质科学与技术学院_博士生大科学中心_PI研究组_翁祖谦组大科学中心_公共科研平台_大科学装置建设部
通讯作者	Yuan, Chunze; Zhu, Ruixue; Weng, Tsu-Chien
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.ShanghaiTech Univ, Ctr Transformat Sci, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院; 上海科技大学
通讯作者单位	物质科学与技术学院; 上海科技大学
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Dou, Hongbin,Yuan, Chunze,Zhu, Ruixue,et al. Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy[J]. NANOMATERIALS,2024,14(1).
APA	Dou, Hongbin,Yuan, Chunze,Zhu, Ruixue,Li, Lin,Zhang, Jihao,&Weng, Tsu-Chien.(2024).Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy.NANOMATERIALS,14(1).
MLA	Dou, Hongbin,et al."Impact of Surface Trap States on Electron and Energy Transfer in CdSe Quantum Dots Studied by Femtosecond Transient Absorption Spectroscopy".NANOMATERIALS 14.1(2024).