Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells

doi:10.1016/j.solmat.2023.112652

	Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells
	Zhou, Yinuo 1,2; Zhang, Liping 1,2; Liu, Wenzhu 1,2; Zhang, Honghua 1,2; Huang, Shenglei1,2,3 ; Lan, Shihu 4; Zhao, Hui 4; Fu, Haoxin 4; Han, Anjun 1; Li, Zhenfei 1,2; Jiang, Kai 1,2; Yu, Xiangrui 5; Zhao, Dongming 5; Li, Rui 6; Meng, Fanying 1,2; Liu, Zhengxin1,2,3
	2024-01-15
发表期刊	SOLAR ENERGY MATERIALS AND SOLAR CELLS (IF:6.3[JCR-2023],6.0[5-Year])
ISSN	0927-0248
卷号	265
发表状态	已发表
DOI	10.1016/j.solmat.2023.112652
摘要	N-type hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) is potential to enhance the performance of silicon heterojunction solar cells, but the raised plasma damage on underlying layer during the nc-SiOx:H deposition with a high-volume fraction of hydrogen is a burning issue. The underlying intrinsic hydrogenated amorphous silicon (i-a-Si:H) bilayer between n-type crystalline silicon (c-Si) and n-type nc-SiOx:H has been investigated by modulating silane (SiH4) gas flow rate (GFR) of interface porous layer. It has been found that the initial H-rich i-a-Si:H bilayer deposited by interfacial 1600 sccm GFR with relatively stable larger voids diameter and less voids number density can not only withstand hydrogen ions bombardment but also passivate c-Si surface well. Meanwhile, it also has been verified that the optimal n-seed deposition can further enhance both total hydrogen content and hydrogen content in compact structure to promote c-Si surface passivation and carrier transportation. The optimized SiH4 GFR for the interfacial i-a-Si:H growth and the appropriate deposition time of n-seed layer have been applied into the front passivation layer of silicon heterojunction solar cells, thus a high efficiency of approximate 25 % with high VOC and FF has been achieved. © 2023 Elsevier B.V.
关键词	Amorphous silicon Deposition Flow of gases Heterojunctions Hydrogenation Ion bombardment Microstructure Nanocrystalline silicon Nanocrystals Oxide films Passivation Phase interfaces Porous silicon Silicon compounds Silicon solar cells Heterojunction solar cells Intrinsic hydrogenated amorphous silicon Ions bombardment Microstructure of silicon film Nanocrystalline silicon oxide Silicon films Silicon heterojunction solar cell Silicon heterojunctions SiO x Surface passivation
收录类别	SCI ; EI ; SCIE
语种	英语
出版者	Elsevier B.V.
EI入藏号	20234815115995
EI主题词	Silicon oxides
EI分类号	539.2.1 Protection Methods ; 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 631.1.2 Gas Dynamics ; 702.3 Solar Cells ; 714.2 Semiconductor Devices and Integrated Circuits ; 761 Nanotechnology ; 801.4 Physical Chemistry ; 802.2 Chemical Reactions ; 802.3 Chemical Operations ; 804 Chemical Products Generally ; 932.1 High Energy Physics ; 933.1 Crystalline Solids ; 951 Materials Science
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/348621
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_刘正新组物质科学与技术学院_本科生物质科学与技术学院_博士生 2060研究院
通讯作者	Zhang, Liping; Liu, Zhengxin
作者单位	1.Research Center for New Energy Technology (RCNET), National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Changning, Shanghai; 200050, China 2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences (UCAS), Shijingshan, Beijing; 100049, China 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 4.Tongwei Solar (Chengdu) Co, Ltd, Chengdu; 610200, China 5.Huaneng Clean Energy Research Institute, Beijing; 102209, China 6.Huaneng Gansu Energy Development Co, Ltd, Gansu, Lanzhou; 730070, China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhou, Yinuo,Zhang, Liping,Liu, Wenzhu,et al. Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2024,265.
APA	Zhou, Yinuo.,Zhang, Liping.,Liu, Wenzhu.,Zhang, Honghua.,Huang, Shenglei.,...&Liu, Zhengxin.(2024).Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,265.
MLA	Zhou, Yinuo,et al."Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 265(2024).