Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism
2021-09-05
状态已发表
摘要

The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals ferromagnet Fe5-xGeTe2 with a Curie temperature Tc ~ 270 K, which can even reach as high as ~ 120 K. The WAL effect could be well described by the Hikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strong spin-orbit coupling (SOC). Moreover, A crossover from a peak to dip behavior around 60 K in both the magnetoresistance and magnetoconductance was observed, which could be ascribed to a rare example of temperature driven Lifshitz transition as indicated by the angle-resolved photoemission spectroscopy measurements and first principles calculations. The reflective magnetic circular dichroism measurements indicate a possible spin reorientation that kills the WAL effect above 120 K. Our findings present a rare example of WAL effect in two-dimensional ferromagnet and also a magnetotransport fingerprint of the strong SOC in Fe5-xGeTe2. The results would be instructive for understanding the interaction Hamiltonian for such high Tc itinerant ferromagnetism as well as be helpful for the design of next-generation room temperature spintronic or twistronic devices.

关键词van der Waals ferromagnet Fe5-XGeTe2 room-temperature Curie temperature weak antilocalization effect spin-orbit coupling
DOIarXiv:2109.02085
相关网址查看原文
出处Arxiv
WOS记录号PPRN:11915462
WOS类目Physics, Condensed Matter
资助项目National Science Foundation of China[
文献类型预印本
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/348252
专题物质科学与技术学院
物质科学与技术学院_PI研究组_薛加民组
物质科学与技术学院_PI研究组_柳仲楷组
物质科学与技术学院_PI研究组_郭艳峰组
物质科学与技术学院_公共科研平台_分析测试平台
物质科学与技术学院_博士生
物质科学与技术学院_PI研究组_李军组
作者单位
1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
2.Renmin Univ China, Dept Phys, Beijing Key Lab Optoelect Funct Mat & Micronano Devices, Beijing 100190, Peoples R China
3.Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
4.ShanghaiTech Univ, Analyt Instrumentat Ctr, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
5.ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
6.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
7.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
推荐引用方式
GB/T 7714
Li, Zhengxian,Huang, Kui,Guo, Deping,et al. Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism. 2021.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Li, Zhengxian]的文章
[Huang, Kui]的文章
[Guo, Deping]的文章
百度学术
百度学术中相似的文章
[Li, Zhengxian]的文章
[Huang, Kui]的文章
[Guo, Deping]的文章
必应学术
必应学术中相似的文章
[Li, Zhengxian]的文章
[Huang, Kui]的文章
[Guo, Deping]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。