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Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism | |
2021-09-05 | |
状态 | 已发表 |
摘要 | The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals ferromagnet Fe5-xGeTe2 with a Curie temperature Tc ~ 270 K, which can even reach as high as ~ 120 K. The WAL effect could be well described by the Hikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strong spin-orbit coupling (SOC). Moreover, A crossover from a peak to dip behavior around 60 K in both the magnetoresistance and magnetoconductance was observed, which could be ascribed to a rare example of temperature driven Lifshitz transition as indicated by the angle-resolved photoemission spectroscopy measurements and first principles calculations. The reflective magnetic circular dichroism measurements indicate a possible spin reorientation that kills the WAL effect above 120 K. Our findings present a rare example of WAL effect in two-dimensional ferromagnet and also a magnetotransport fingerprint of the strong SOC in Fe5-xGeTe2. The results would be instructive for understanding the interaction Hamiltonian for such high Tc itinerant ferromagnetism as well as be helpful for the design of next-generation room temperature spintronic or twistronic devices. |
关键词 | van der Waals ferromagnet Fe5-XGeTe2 room-temperature Curie temperature weak antilocalization effect spin-orbit coupling |
DOI | arXiv:2109.02085 |
相关网址 | 查看原文 |
出处 | Arxiv |
WOS记录号 | PPRN:11915462 |
WOS类目 | Physics, Condensed Matter |
资助项目 | National Science Foundation of China[ |
文献类型 | 预印本 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/348252 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_薛加民组 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_PI研究组_郭艳峰组 物质科学与技术学院_公共科研平台_分析测试平台 物质科学与技术学院_博士生 物质科学与技术学院_PI研究组_李军组 |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Renmin Univ China, Dept Phys, Beijing Key Lab Optoelect Funct Mat & Micronano Devices, Beijing 100190, Peoples R China 3.Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 4.ShanghaiTech Univ, Analyt Instrumentat Ctr, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 6.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 7.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Zhengxian,Huang, Kui,Guo, Deping,et al. Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism. 2021. |
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