High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking

doi:10.1109/JLT.2023.3328899

	High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking
	Tianyu Long1 ; Zhiyang Xie1 ; Linze Li1 ; Luyu Wang1 ; Xinbo Zou1 ; Haiming Ji 2; Juanjuan Lu1 ; Baile Chen1
	2023
发表期刊	JOURNAL OF LIGHTWAVE TECHNOLOGY (IF:4.1[JCR-2023],4.1[5-Year])
ISSN	1558-2213
EISSN	1558-2213
卷号	PP 期号:99 页码:1-7
发表状态	已发表
DOI	10.1109/JLT.2023.3328899
摘要	In this work, high-speed 850 nm GaAs/AlGaAs based dual-depletion-region photodetectors are demonstrated, which aim to meet the increasing need for bandwidth scaling and data rate in short-reach optical links. The devices exhibit the low dark current of ∼134.5 fA and responsivity of ∼0.44 A/W at 850 nm. The 3-dB bandwidth of 20 μm and 28 μm diameter devices with 50-ohm characteristic impedance transmission line were measured to be 29.72 GHz and 24.71 GHz respectively. While by incorporating inductive peaking via high characteristic impedance transmission line, the 20 μm and 28 μm diameter devices achieved maximum 3-dB bandwidth of 46.06 GHz and 36.09 GHz respectively. To the best of our knowledge, this 20 μm diameter device exhibits the highest 3-dB bandwidth among all the 850 nm photodetectors. This research showcases the potential of 850 nm dual-depletion-region photodetectors as promising solutions for high-speed short-reach optical communication systems, offering improved performance in terms of bandwidth and enabling the advancement of data transmission capabilities. IEEE
关键词	high-speed 850 nm photodetectors dual-depletion-region photodetectors inductive peaking
URL	查看原文
收录类别	EI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20240215341826
EI主题词	Photodetectors
EI分类号	541.2 Aluminum Alloys ; 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 706.1.1 Electric Power Transmission ; 706.2 Electric Power Lines and Equipment ; 712.1 Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 716.1 Information Theory and Signal Processing ; 717.1 Optical Communication Systems ; 804 Chemical Products Generally ; 931.3 Atomic and Molecular Physics
原始文献类型	Article in Press
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/345781
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生信息科学与技术学院_博士生信息科学与技术学院_PI研究组_陆娟娟组
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.University of Chinese Academy of Sciences, Beijing, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Tianyu Long,Zhiyang Xie,Linze Li,et al. High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2023,PP(99):1-7.
APA	Tianyu Long.,Zhiyang Xie.,Linze Li.,Luyu Wang.,Xinbo Zou.,...&Baile Chen.(2023).High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking.JOURNAL OF LIGHTWAVE TECHNOLOGY,PP(99),1-7.
MLA	Tianyu Long,et al."High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking".JOURNAL OF LIGHTWAVE TECHNOLOGY PP.99(2023):1-7.