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Weak dimensionality dependence of charge density wave transition in 2H-NbSe2 | |
2023-10-09 | |
发表期刊 | APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year]) |
ISSN | 0003-6951 |
EISSN | 1077-3118 |
卷号 | 123期号:15 |
发表状态 | 已发表 |
DOI | 10.1063/5.0172460 |
摘要 | The effect of dimensionality on charge density wave (CDW) transition temperature (T-CDW) in 2H-NbSe2 is still under debate. Raman measurements uncovered highly enhanced T-CDW for few-layer samples, while scanning tunneling microscopy results suggest comparable value of bulk crystals. Here, we obtained high-quality crystals of 2H-NbSe2 with residual resistivity ratio up to 120 and processed thin flakes by mechanical exfoliation. Electrical resistance measurements were carried out on crystals with different thickness to monitor the dimensionality dependence of T-CDW, superconducting T-c, and upper critical field H-c2. It is revealed that when the bulk crystal evolves into few layers, the T-CDW only increases slightly, though the variations of T-c and upper critical field H-c2 are consistent with previous results. The observed weak dependence of long-range CDW order on dimensionality agrees well with the recent theoretical calculations on anharmonic spectra. These results reconcile experiment and theory, and thus shed light on the mechanism of CDW for thin flakes of 2H-NbSe2. |
关键词 | Charge density Crystals Niobium compounds Scanning tunneling microscopy Selenium compounds Bulk crystals Charge-density-waves Density wave transition Enhanced T High quality crystals Mechanical exfoliation Raman measurements Residual resistivity ratios Upper critical fields Uppercritical fields |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | This work was financially supported by the National Key Ramp;D Program of China (Grant Nos. 2018YFA0305602 and 2017YFA0302904), National Natural Science Foundation of China (Grant Nos. 12074002, 11804379, 61975224, 12104303, and 12204007), the Recruitment["2018YFA0305602","2017YFA0302904"] ; National Key Ramp;D Program of China["12074002","11804379","61975224","12104303","12204007"] ; National Natural Science Foundation of China[2019-16] ; Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province[20ZR1436100] ; Science and Technology Commission of Shanghai Municipality, Beijing National Laboratory for Condensed Matter Physics[WHMFC202124] |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:001083992300005 |
出版者 | AIP Publishing |
EI入藏号 | 20234314975156 |
EI主题词 | Charge density waves |
EI分类号 | 701.1 Electricity: Basic Concepts and Phenomena ; 933.1 Crystalline Solids |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/345775 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_李军组 |
通讯作者 | Mu, Qing-Ge; Li, Jun; Shan, Lei |
作者单位 | 1.Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Peoples R China 2.Anhui Univ, Key Lab Struct & Funct Regulat Hybrid Mat, Minist Educ, Hefei 230601, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 4.Chinese Acad Sci, Anhui Key Lab Condensed Matter Phys Extreme Condit, High Magnet Field Lab, HFIPS, Hefei 230031, Anhui, Peoples R China 5.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China 6.Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China |
通讯作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Wang, Suofu,Hou, Xingyuan,Dong, Peng,et al. Weak dimensionality dependence of charge density wave transition in 2H-NbSe2[J]. APPLIED PHYSICS LETTERS,2023,123(15). |
APA | Wang, Suofu.,Hou, Xingyuan.,Dong, Peng.,Dong, Qingsong.,Shi, Hongwei.,...&Shan, Lei.(2023).Weak dimensionality dependence of charge density wave transition in 2H-NbSe2.APPLIED PHYSICS LETTERS,123(15). |
MLA | Wang, Suofu,et al."Weak dimensionality dependence of charge density wave transition in 2H-NbSe2".APPLIED PHYSICS LETTERS 123.15(2023). |
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