Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection

doi:10.1007/s11082-019-1839-3

	Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection
	Luo, Man1,2,4,5 ; Chen, Xiaoyao 3; Wu, Peisong 1,2,5; Wang, Hailu 1,2,5; Chen, Yunfeng 1,2,5; Chen, Fansheng 1,2,5; Zhang, Lili 1,2,5; Chen, Xiaoshuang 1,2
	2019-05
发表期刊	OPTICAL AND QUANTUM ELECTRONICS
ISSN	0306-8919
卷号	51 期号:5
发表状态	已发表
DOI	10.1007/s11082-019-1839-3
摘要	Van der Waals heterojunctions based on atomically thin two-dimensional (2D) materials have attracted numerous attention for their special scientific research value and promising applications in photoelectric and micro-nano electronic devices. Especially, the carrier generation, separation, and extraction process in 2D materials can be easily modulated by external field, which may facilitate some multifunctional electronics and optoelectronics. In this paper, we report a unique type-II band alignment ReS2/MoTe2 heterojunction with rectification inversion due to the fact the bottom few-layer MoTe2 can be easily tuned from p-type to n-type state through the applied back-gate voltage. Then we study photodetection properties of ReS2/MoTe2 heterojunction, a relatively fast photoresponse time of 109 mu s and a considerable photoresponsivity of 0.34 AW(-1) for 520 nm at room temperature show great potential in photodetection. Our studies of ReS2/MoTe2 heterojunction with rectification inversion and high-performance photodetection will facilitate the development of electronics and optoelectronics based on atomically-thin heterojunctions.
关键词	2D layer materials Heterojunction Rectification inversion Photodetection
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	National Natural Science Foundation of China[91850208] ; National Natural Science Foundation of China[61804031]
WOS研究方向	Engineering ; Physics ; Optics
WOS类目	Engineering, Electrical & Electronic ; Quantum Science & Technology ; Optics
WOS记录号	WOS:000464898000001
出版者	SPRINGER
EI入藏号	20191706812673
EI主题词	D region ; Electric rectifiers ; Nanoelectronics ; Photodetectors ; Tellurium compounds ; Van der Waals forces
EI分类号	Meteorology:443 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Physical Chemistry:801.4
WOS关键词	MOTE2
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/34325
专题	物质科学与技术学院_博士生
通讯作者	Chen, Fansheng; Zhang, Lili; Chen, Xiaoshuang
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Intelligent Infrared Percept, 500 Yu Tian Rd, Shanghai 200083, Peoples R China 3.Fudan Univ, Adv Mat Lab, Shanghai 200438, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201203, Peoples R China 5.Univ Chinese Acad Sci, 19 Yu Quan Rd, Beijing 100049, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Luo, Man,Chen, Xiaoyao,Wu, Peisong,et al. Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection[J]. OPTICAL AND QUANTUM ELECTRONICS,2019,51(5).
APA	Luo, Man.,Chen, Xiaoyao.,Wu, Peisong.,Wang, Hailu.,Chen, Yunfeng.,...&Chen, Xiaoshuang.(2019).Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection.OPTICAL AND QUANTUM ELECTRONICS,51(5).
MLA	Luo, Man,et al."Gate-tunable ReS2/MoTe2 heterojunction with high-performance photodetection".OPTICAL AND QUANTUM ELECTRONICS 51.5(2019).