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Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb1 − xBi x)4Te7 | |
2023-09-01 | |
发表期刊 | CHINESE PHYSICS B (IF:1.5[JCR-2023],1.4[5-Year]) |
ISSN | 1674-1056 |
EISSN | 2058-3834 |
卷号 | 32期号:9 |
发表状态 | 已发表 |
DOI | 10.1088/1674-1056/acd629 |
摘要 | The van der Waals (vdW) MnSb4Te7 is a newly synthesized antiferromagnetic (AFM) topological insulator hosting a robust axion insulator state irrelative to the specific spin structure. However, the intrinsic hole doped character of MnSb4Te7 makes the Fermi level far away from the Dirac point of about 180 meV, which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect (QAHE). To shift up the Fermi level close to the Dirac point, the strategy of partially replacing Sb with Bi as Mn(Sb1−xBi x)4Te7 was tried and the magnetotransport properties, in particular, the anomalous Hall effect, were measured and analyzed. Through the electron doping, the anomalous Hall conductance σ AH changes from negative to positive between x = 0.3 and 0.5, indicative of a possible topological transition. Besides, a charge neutrality point (CNP) also appears between x = 0.6 and 0.7. The results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism, as well as for the exploration of exotic topological properties. © 2023 Chinese Physical Society and IOP Publishing Ltd |
关键词 | Fermi level Manganese compounds Quantum Hall effect Tellurium compounds Topological insulators Topology Van der Waals forces Anomalous hall effects Antiferromagnetics Dirac point Spin structures Synthesised Topological insulators Topological materials Topological phase Topological properties Van der Waal |
URL | 查看原文 |
收录类别 | EI ; SCI |
语种 | 英语 |
资助项目 | Project supported by the Shanghai Science and Technology Innovation Action Plan (Grant No. 21JC1402000), the National Natural Science Foundation of China (Grant No. 12004405), the State Key Laboratory of Functional Materials for Informatics (Grant No. SKL2[21JC1402000] ; Shanghai Science and Technology Innovation Action Plan[12004405] ; National Natural Science Foundation of China[SKL2022] ; State Key Laboratory of Functional Materials for Informatics[SPST-AIC10112914] ; ShanghaiTech University[KF2022_13] |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
WOS记录号 | WOS:001089893500001 |
出版者 | Institute of Physics |
EI入藏号 | 20234114856828 |
EI主题词 | Antimony compounds |
EI分类号 | 801.4 Physical Chemistry ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931 Classical Physics ; Quantum Theory ; Relativity ; 931.3 Atomic and Molecular Physics |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/340975 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_郭艳峰组 物质科学与技术学院_公共科研平台_分析测试平台 物质科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 |
通讯作者 | Liu, Zhengtai; Xia, Wei |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 3.ShanghaiTech Univ, Analyt Instrumentat Ctr, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China 5.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 6.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院; 上海科技大学 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhang, Xin,Jiang, Zhicheng,Yuan, Jian,et al. Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb1 − xBi x)4Te7[J]. CHINESE PHYSICS B,2023,32(9). |
APA | Zhang, Xin.,Jiang, Zhicheng.,Yuan, Jian.,Hou, Xiaofei.,Wang, Xia.,...&Guo, Yanfeng.(2023).Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb1 − xBi x)4Te7.CHINESE PHYSICS B,32(9). |
MLA | Zhang, Xin,et al."Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb1 − xBi x)4Te7".CHINESE PHYSICS B 32.9(2023). |
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