Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices

doi:10.1038/s41467-023-39489-z

	Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices
	Xue, Huanyi 1,2; Qian, Ruijie 1,2,3; Lu, Weikang 1,2,4; Gong, Xue 1,2; Qin, Ludi 1,2; Zhong, Zhenyang 1,2; An, Zhenghua 1,2,4,5,6; Chen, Lidong 7; Lu, Wei3,8
	2023-06-22
发表期刊	NATURE COMMUNICATIONS
EISSN	2041-1723
卷号	14 期号:1
发表状态	已发表
DOI	10.1038/s41467-023-39489-z
摘要	The study of thermoelectric behaviors in miniatured transistors is of fundamental importance for developing bottom-level thermal management. Recent experimental progress in nanothermetry has enabled studies of the microscopic temperature profiles of nanostructured metals, semiconductors, two-dimensional material, and molecular junctions. However, observations of thermoelectric (such as nonequilibrium Peltier and Thomson) effect in prevailing silicon (Si)-a critical step for on-chip refrigeration using Si itself-have not been addressed so far. Here, we carry out nanothermometric imaging of both electron temperature (T-e) and lattice temperature (T-L) of a Si nanoconstriction device and find obvious thermoelectric effect in the vicinity of the electron hotspots: When the electrical current passes through the nanoconstriction channel generating electron hotspots (with T-e similar to 1500 K being much higher than T-L similar to 320 K), prominent thermoelectric effect is directly visualized attributable to the extremely large electron temperature gradient (similar to 1 K/nm). The quantitative measurement shows a distinctive third-power dependence of the observed thermoelectric on the electrical current, which is consistent with the theoretically predicted nonequilibrium thermoelectric effects. Our work suggests that the nonequilibrium hot carriers may be potentially utilized for enhancing the thermoelectric performance and therefore sheds new light on the nanoscale thermal management of post-Moore nanoelectronics.
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收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)["12027805","11991060","61521005","11634012","11674070"] ; Shanghai Science and Technology Committee["18JC1420400","18JC1410300","20JC1414700","20DZ1100604"] ; Sino-German Center for Research Promotion[M-0174]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001058061100042
出版者	NATURE PORTFOLIO
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/337720
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_陆卫组
通讯作者	An, Zhenghua; Lu, Wei
作者单位	1.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 2.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Dept Phys, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 4.Shanghai Qi Zhi Inst, 41th Floor,AI Tower,701 Yunjin Rd, Shanghai 200232, Peoples R China 5.Fudan Univ, Yiwu Res Inst, Shanghai 200083, Peoples R China 6.Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai, Peoples R China 8.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Xue, Huanyi,Qian, Ruijie,Lu, Weikang,et al. Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices[J]. NATURE COMMUNICATIONS,2023,14(1).
APA	Xue, Huanyi.,Qian, Ruijie.,Lu, Weikang.,Gong, Xue.,Qin, Ludi.,...&Lu, Wei.(2023).Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices.NATURE COMMUNICATIONS,14(1).
MLA	Xue, Huanyi,et al."Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices".NATURE COMMUNICATIONS 14.1(2023).