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| Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices | |
| 2023-06-22 | |
| Source Publication | NATURE COMMUNICATIONS
 |
| EISSN | 2041-1723 |
| Volume | 14Issue:1 |
| Status | 已发表 |
| DOI | 10.1038/s41467-023-39489-z |
| Abstract | The study of thermoelectric behaviors in miniatured transistors is of fundamental importance for developing bottom-level thermal management. Recent experimental progress in nanothermetry has enabled studies of the microscopic temperature profiles of nanostructured metals, semiconductors, two-dimensional material, and molecular junctions. However, observations of thermoelectric (such as nonequilibrium Peltier and Thomson) effect in prevailing silicon (Si)-a critical step for on-chip refrigeration using Si itself-have not been addressed so far. Here, we carry out nanothermometric imaging of both electron temperature (T-e) and lattice temperature (T-L) of a Si nanoconstriction device and find obvious thermoelectric effect in the vicinity of the electron hotspots: When the electrical current passes through the nanoconstriction channel generating electron hotspots (with T-e similar to 1500 K being much higher than T-L similar to 320 K), prominent thermoelectric effect is directly visualized attributable to the extremely large electron temperature gradient (similar to 1 K/nm). The quantitative measurement shows a distinctive third-power dependence of the observed thermoelectric on the electrical current, which is consistent with the theoretically predicted nonequilibrium thermoelectric effects. Our work suggests that the nonequilibrium hot carriers may be potentially utilized for enhancing the thermoelectric performance and therefore sheds new light on the nanoscale thermal management of post-Moore nanoelectronics. |
| URL | 查看原文 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China (NSFC)["12027805","11991060","61521005","11634012","11674070"] ; Shanghai Science and Technology Committee["18JC1420400","18JC1410300","20JC1414700","20DZ1100604"] ; Sino-German Center for Research Promotion[M-0174] |
| WOS Research Area | Science & Technology - Other Topics |
| WOS Subject | Multidisciplinary Sciences |
| WOS ID | WOS:001058061100042 |
| Publisher | NATURE PORTFOLIO |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/337720 |
| Collection | 物质科学与技术学院 物质科学与技术学院_特聘教授组_陆卫组 |
| Corresponding Author | An, Zhenghua; Lu, Wei |
| Affiliation | 1.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 2.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Dept Phys, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 4.Shanghai Qi Zhi Inst, 41th Floor,AI Tower,701 Yunjin Rd, Shanghai 200232, Peoples R China 5.Fudan Univ, Yiwu Res Inst, Shanghai 200083, Peoples R China 6.Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Shanghai 201210, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai, Peoples R China 8.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China |
| Corresponding Author Affilication | School of Physical Science and Technology |
| Recommended Citation GB/T 7714 | Xue, Huanyi,Qian, Ruijie,Lu, Weikang,et al. Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices[J]. NATURE COMMUNICATIONS,2023,14(1). |
| APA | Xue, Huanyi.,Qian, Ruijie.,Lu, Weikang.,Gong, Xue.,Qin, Ludi.,...&Lu, Wei.(2023).Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices.NATURE COMMUNICATIONS,14(1). |
| MLA | Xue, Huanyi,et al."Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices".NATURE COMMUNICATIONS 14.1(2023). |
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