Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector

doi:10.1109/OECC56963.2023.10209925

	Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector
	Zhijian Shen1 ; Jinshan Yao 2; Hong Lu 1; Baile Chen 2
	2023-07-02
会议录名称	2023 OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC)
ISSN	2166-8884
发表状态	已发表
DOI	10.1109/OECC56963.2023.10209925
摘要	We present a UTC-structured high-speed InAs/GaSb T2SL MWIR PD. At 300K, The device has a 4.2 $\mu \mathrm{m}$ zero-bias responsivity of 0.24 A/W and a 4.54 GHz 3-dB bandwidth at -5V.
关键词	Mid-wave infrared photodetector high-speed photodetector InAs/GaSb type-II superlattice uni-traveling carrier photodiode
会议地点	Shanghai, China
会议日期	2-6 July 2023
URL	查看原文
来源库	IEEE
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/333420
专题	信息科学与技术学院信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.College of Engineering and Applied Sciences, Nanjing University, Nanjing, Jiangsu Province, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zhijian Shen,Jinshan Yao,Hong Lu,et al. Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector[C],2023.