| |||||||
ShanghaiTech University Knowledge Management System
| Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications | |
Liu, Xinqi1,2  ; Huang, Puyang3; Xia, Yunyouyou1,2; Gao, Lei4; Liao, Liyang5; Cui, Baoshan6; Backes, Dirk7; van der Laan, Gerrit7; Hesjedal, Thorsten8; Ji, Yuchen1,2; Chen, Peng1,3; Zhang, Yifan1,3; Wu, Fan2; Wang, Meixiao1,2; Zhang, Junwei4; Yu, Guoqiang6,9; Song, Cheng5; Chen, Yulin1,2,8; Liu, Zhongkai1,2; Yang, Yumeng3; Peng, Yong4; Li, Gang1,2; Yao, Qi1,2; Kou, Xufeng1,3
| |
| 2023 | |
| 发表期刊 | ADVANCED FUNCTIONAL MATERIALS (IF:18.5[JCR-2023],19.6[5-Year]) |
| ISSN | 1616-301X |
| EISSN | 1616-3028 |
| 卷号 | 33期号:50 |
| 发表状态 | 已发表 |
| DOI | 10.1002/adfm.202304454 |
| 摘要 | To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs. © 2023 Wiley-VCH GmbH. |
| 关键词 | Alumina Aluminum oxide Energy efficiency Epitaxial growth Ferromagnetic materials Ferromagnetism Magnetization Sapphire Structural optimization Surface morphology Van der Waals forces 2d ferromagnet Ferromagnets Interface engineering Magnetic memory Spin orbits Spin-orbit torque switch Van der Waal Van der waal heterostructure Wafer scale Wafer-scale epitaxial growth |
| URL | 查看原文 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 资助项目 | National Key R&D Program of China[2021YFA0715503] ; National Natural Science Foundation of China["92164104","61874172","11904230"] ; Major Project of Science and Technology Commission of Shanghai Municipality[2018SHZDZX02] ; Shanghaitech Quantum Device and Soft Matter Nano-fabrication Labs[SMN180827] ; Shanghai RisingStar program[21QA1406000] ; Shanghai Sailing Program[19YF1433200] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:001064025900001 |
| 出版者 | John Wiley and Sons Inc |
| EI入藏号 | 20233614697490 |
| EI主题词 | Morphology |
| EI分类号 | 482.2.1 Gems ; 525.2 Energy Conservation ; 701.2 Magnetism: Basic Concepts and Phenomena ; 708.4 Magnetic Materials ; 801.4 Physical Chemistry ; 802.3 Chemical Operations ; 804.2 Inorganic Compounds ; 921.5 Optimization Techniques ; 931.2 Physical Properties of Gases, Liquids and Solids ; 931.3 Atomic and Molecular Physics ; 933.1.2 Crystal Growth ; 951 Materials Science |
| 原始文献类型 | Article in Press |
| 引用统计 | 正在获取...
|
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/329004 |
| 专题 | 物质科学与技术学院 信息科学与技术学院 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_PI研究组_李刚组 信息科学与技术学院_PI研究组_寇煦丰组 物质科学与技术学院_特聘教授组_陈宇林 物质科学与技术学院_博士生 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 信息科学与技术学院_PI研究组_杨雨梦组 大科学中心_公共科研平台_大科学装置建设部 |
| 通讯作者 | Li, Gang; Yao, Qi; Kou, Xufeng |
| 作者单位 | 1.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 4.Lanzhou Univ, Sch Mat & Energy, Lanzhou 730000, Peoples R China 5.Tsinghua Univ, Beijing Innovat Ctr Future Chips, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China 6.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China 7.Diamond Light Source, Harwell Sci & Innovat Campus, Didcot OX11 0DE, Oxon, England 8.Univ Oxford, Dept Phys, Oxford OX1 3PU, England 9.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China |
| 第一作者单位 | 上海科技大学; 物质科学与技术学院 |
| 通讯作者单位 | 上海科技大学; 物质科学与技术学院; 信息科学与技术学院 |
| 第一作者的第一单位 | 上海科技大学 |
| 推荐引用方式 GB/T 7714 | Liu, Xinqi,Huang, Puyang,Xia, Yunyouyou,et al. Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications[J]. ADVANCED FUNCTIONAL MATERIALS,2023,33(50). |
| APA | Liu, Xinqi.,Huang, Puyang.,Xia, Yunyouyou.,Gao, Lei.,Liao, Liyang.,...&Kou, Xufeng.(2023).Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications.ADVANCED FUNCTIONAL MATERIALS,33(50). |
| MLA | Liu, Xinqi,et al."Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications".ADVANCED FUNCTIONAL MATERIALS 33.50(2023). |
| 条目包含的文件 | 下载所有文件 | |||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
修改评论
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。