Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na2O-Ga2O3-TiO2 System

doi:10.3390/nano13142054

	Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na2O-Ga2O3-TiO2 System
	Garcia-Fernandez, Javier 1; Hernando, Maria 1; Torres-Pardo, Almudena 1; Lopez, Maria Luisa 1; Fernandez-Diaz, Maria Teresa 2; Zhang, Qing3 ; Terasaki, Osamu3 ; Ramirez-Castellanos, Julio 1; Gonzalez-Calbet, Jose M.1,4
	2023-07-01
发表期刊	NANOMATERIALS
EISSN	2079-4991
卷号	13 期号:14
发表状态	已发表
DOI	10.3390/nano13142054
摘要	This article focuses on the Na2O-Ga2O3-TiO2 system, which is barely explored in the study of transparent conductive oxides (TCOs). NaxGa4+xTin-4-xO2n-2 (n = 5, 6, and 7 and x & AP; 0.7-0.8) materials were characterized using neutron powder diffraction and aberration-corrected scanning transmission electron microscopy. Activation energy, as a function of different structures depending on tunnel size, shows a significant improvement in Na+ ion conduction from hexagonal to octagonal tunnels. New insights into the relationship between the crystal structure and the transport properties of TCOs, which are crucial for the design and development of new optoelectronic devices, are provided.
关键词	nano-characterization neutron powder diffraction (Cs)-corrected electron microscopy impedance spectroscopy wide band gap semiconductor
URL	查看原文
收录类别	SCI
语种	英语
资助项目	Spanish Ministry of Economy["MAT2014-54372-R","MAT2017-82252-R","PID2020-113753RB-I00"] ; Comunidad de Madrid[PR65-19-22438]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001038799400001
出版者	MDPI
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/321458
专题	物质科学与技术学院_公共科研平台_物质科学电镜平台物质科学与技术学院_PI研究组_Osamu Terasaki组
通讯作者	Garcia-Fernandez, Javier; Ramirez-Castellanos, Julio
作者单位	1.Univ Complutense Madrid, Chem Sci Fac, Inorgan Chem Dept, Madrid 28040, Spain 2.Inst Laue Langevin, 71 Ave Martyrs,CS 20156, F-38042 Grenoble 9, France 3.ShanghaiTech Univ, Ctr High Resolut Electron Microscopy, Shanghai 201210, Peoples R China 4.Univ Complutense Madrid, ICTS Natl Ctr Electron Microscopy, Madrid 28040, Spain
推荐引用方式 GB/T 7714	Garcia-Fernandez, Javier,Hernando, Maria,Torres-Pardo, Almudena,et al. Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na2O-Ga2O3-TiO2 System[J]. NANOMATERIALS,2023,13(14).
APA	Garcia-Fernandez, Javier.,Hernando, Maria.,Torres-Pardo, Almudena.,Lopez, Maria Luisa.,Fernandez-Diaz, Maria Teresa.,...&Gonzalez-Calbet, Jose M..(2023).Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na2O-Ga2O3-TiO2 System.NANOMATERIALS,13(14).
MLA	Garcia-Fernandez, Javier,et al."Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na2O-Ga2O3-TiO2 System".NANOMATERIALS 13.14(2023).