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Thermal conductivity of high-temperature high-pressure synthesized θ-TaN
2023-05-29
发表期刊APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN0003-6951
EISSN1077-3118
卷号122期号:22
发表状态已发表
DOI10.1063/5.0146492
摘要

Recent first-principles calculation predicted that theta phase tantalum nitride (θ-TaN) single crystal has an ultrahigh thermal conductivity of ∼1000 W m−1 K−1 at room temperature, making it one of the best thermal conductors among all materials. Here, we have synthesized θ-TaN by phase change from -TaN powder at 1750 K and 7.8 GPa. X-ray diffraction patterns and scanning transmission electron microscopy indicate that the as-prepared θ-TaN has a hexagonal tungsten carbide structure with an average grain size of 45 nm. The room-temperature thermal conductivity of θ-TaN was measured to be 47.5 W m−1 K−1 using time-domain thermoreflectance. Temperature-dependent thermal conductivity suggests that phonon-boundary scattering dominates thermal transport. The thermal conductivity of our sample is higher than those of Si and SiC nanostructures with the same characteristic length. Our result suggests that it is probable to further increase the thermal conductivity of θ-TaN. © 2023 Author(s).

关键词High resolution transmission electron microscopy Scanning electron microscopy Silicon carbide Tantalum compounds Thermal conductivity Time domain analysis First principle calculations Hexagonal tungsten carbides High Temperatures-High Pressures Phase Change Scanning transmission electron microscopy Synthesised Thermal conductors Theta phase Ultrahigh-thermal-conductivity X ray diffraction patterns
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收录类别EI ; SCI
语种英语
资助项目National Natural Science Foundation of China["12004211","52161145502"] ; Shenzhen Science and Technology Program["RCYX20200714114643187","WDZC20200821100123001"] ; Tsinghua Shenzhen International Graduate School["QD2021008N","JC2021008"]
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:001010089000008
出版者American Institute of Physics Inc.
EI入藏号20232314194602
EI主题词Single crystals
EI分类号641.1 Thermodynamics ; 741.3 Optical Devices and Systems ; 804.2 Inorganic Compounds ; 921 Mathematics ; 933.1 Crystalline Solids
原始文献类型Journal article (JA)
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/312331
专题信息科学与技术学院
信息科学与技术学院_硕士生
信息科学与技术学院_博士生
信息科学与技术学院_PI研究组_杨雨梦组
通讯作者Sun, Bo
作者单位
1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
5.Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
6.Guangdong Prov Key Lab Thermal Management Engn & M, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714
Liu, Yizhe,Li, Qinshu,Qian, Yijun,et al. Thermal conductivity of high-temperature high-pressure synthesized θ-TaN[J]. APPLIED PHYSICS LETTERS,2023,122(22).
APA Liu, Yizhe.,Li, Qinshu.,Qian, Yijun.,Yang, Yumeng.,Wang, Shanmin.,...&Sun, Bo.(2023).Thermal conductivity of high-temperature high-pressure synthesized θ-TaN.APPLIED PHYSICS LETTERS,122(22).
MLA Liu, Yizhe,et al."Thermal conductivity of high-temperature high-pressure synthesized θ-TaN".APPLIED PHYSICS LETTERS 122.22(2023).
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