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ShanghaiTech University Knowledge Management System
Thermal conductivity of high-temperature high-pressure synthesized θ-TaN | |
2023-05-29 | |
发表期刊 | APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year]) |
ISSN | 0003-6951 |
EISSN | 1077-3118 |
卷号 | 122期号:22 |
发表状态 | 已发表 |
DOI | 10.1063/5.0146492 |
摘要 | Recent first-principles calculation predicted that theta phase tantalum nitride (θ-TaN) single crystal has an ultrahigh thermal conductivity of ∼1000 W m−1 K−1 at room temperature, making it one of the best thermal conductors among all materials. Here, we have synthesized θ-TaN by phase change from -TaN powder at 1750 K and 7.8 GPa. X-ray diffraction patterns and scanning transmission electron microscopy indicate that the as-prepared θ-TaN has a hexagonal tungsten carbide structure with an average grain size of 45 nm. The room-temperature thermal conductivity of θ-TaN was measured to be 47.5 W m−1 K−1 using time-domain thermoreflectance. Temperature-dependent thermal conductivity suggests that phonon-boundary scattering dominates thermal transport. The thermal conductivity of our sample is higher than those of Si and SiC nanostructures with the same characteristic length. Our result suggests that it is probable to further increase the thermal conductivity of θ-TaN. © 2023 Author(s). |
关键词 | High resolution transmission electron microscopy Scanning electron microscopy Silicon carbide Tantalum compounds Thermal conductivity Time domain analysis First principle calculations Hexagonal tungsten carbides High Temperatures-High Pressures Phase Change Scanning transmission electron microscopy Synthesised Thermal conductors Theta phase Ultrahigh-thermal-conductivity X ray diffraction patterns |
URL | 查看原文 |
收录类别 | EI ; SCI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China["12004211","52161145502"] ; Shenzhen Science and Technology Program["RCYX20200714114643187","WDZC20200821100123001"] ; Tsinghua Shenzhen International Graduate School["QD2021008N","JC2021008"] |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:001010089000008 |
出版者 | American Institute of Physics Inc. |
EI入藏号 | 20232314194602 |
EI主题词 | Single crystals |
EI分类号 | 641.1 Thermodynamics ; 741.3 Optical Devices and Systems ; 804.2 Inorganic Compounds ; 921 Mathematics ; 933.1 Crystalline Solids |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/312331 |
专题 | 信息科学与技术学院 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 信息科学与技术学院_PI研究组_杨雨梦组 |
通讯作者 | Sun, Bo |
作者单位 | 1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China 2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 4.Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China 5.Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 6.Guangdong Prov Key Lab Thermal Management Engn & M, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Yizhe,Li, Qinshu,Qian, Yijun,et al. Thermal conductivity of high-temperature high-pressure synthesized θ-TaN[J]. APPLIED PHYSICS LETTERS,2023,122(22). |
APA | Liu, Yizhe.,Li, Qinshu.,Qian, Yijun.,Yang, Yumeng.,Wang, Shanmin.,...&Sun, Bo.(2023).Thermal conductivity of high-temperature high-pressure synthesized θ-TaN.APPLIED PHYSICS LETTERS,122(22). |
MLA | Liu, Yizhe,et al."Thermal conductivity of high-temperature high-pressure synthesized θ-TaN".APPLIED PHYSICS LETTERS 122.22(2023). |
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