Robust Weak Antilocalization Effect Up to similar to 120 K in the van der Waals Crystal Fe5-x GeTe2 with Near-Room-Temperature Ferromagnetism

doi:10.1021/acs.jpclett.3c00380

	Robust Weak Antilocalization Effect Up to similar to 120 K in the van der Waals Crystal Fe5-x GeTe2 with Near-Room-Temperature Ferromagnetism
	Li, Zhengxian1 ; Guo, Deping 2,3; Huang, Kui1 ; Ma, Guodong 4; Liu, Xiaolei1 ; Wu, Yueshen1 ; Yuan, Jian1 ; Tao, Zicheng1 ; Wang, Binbin1 ; Wang, Xia1,5 ; Zou, Zhiqiang1,5 ; Yu, Na1,5 ; Yu, Geliang 4; Xue, Jiamin1 ; Liu, Zhongkai1,6 ; Ji, Wei 2,3; Li, Jun1,6 ; Guo, Yanfeng1,6
	2023-06-01
发表期刊	JOURNAL OF PHYSICAL CHEMISTRY LETTERS (IF:4.8[JCR-2023],5.3[5-Year])
ISSN	1948-7185
EISSN	1948-7185
卷号	14 期号:23 页码:5456-5465
发表状态	已发表
DOI	10.1021/acs.jpclett.3c00380
摘要	The van der Waals Fe5-x GeTe2 is a 3d ferromagnetic metal with a high Curie temperatureof 275 K. We report herein the observation of an exceptional weakantilocalization (WAL) effect that can persist up to 120 K in an Fe5-x GeTe2 nanoflake, indicatingthe dual nature with both itinerant and localized magnetism of 3delectrons. The WAL behavior is characterized by the magnetoconductancepeak around zero magnetic field and is supported by the calculatedlocalized nondispersive flat band around the Fermi level. The peakto dip crossover starting around 60 K in magnetoconductance is visible,which could be ascribed to temperature-induced changes in Fe magneticmoments and the coupled electronic band structure as revealed by angle-resolvedphotoemission spectroscopy and first-principles calculations. Ourfindings would be instructive for understanding the magnetic exchangesin transition metal magnets as well as for the design of next-generationroom-temperature spintronic devices.
关键词	Ferromagnetism Germanium compounds Magnetic moments Photoelectron spectroscopy Tellurium compounds Transition metals Van der Waals forces 3d electron Anti-localization effects High Curie temperature Localised Magnetoconductance Nano-flakes Near room temperature Van der Waal Weak antilocalization Zero magnetic fields
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	Shanghai Science and Technology Innovation Action Plan[21JC1402000] ; National Laboratory of Solid State Microstructures, Nanjing University[M34015] ; National Key Research and Development Program of China[2018YFE0202700] ; National Natural Science Foundation of China[
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Atomic, Molecular & Chemical
WOS记录号	WOS:001006264700001
出版者	AMER CHEMICAL SOC
EI入藏号	20232714334152
EI主题词	Iron compounds
EI分类号	531 Metallurgy and Metallography ; 701.2 Magnetism: Basic Concepts and Phenomena ; 708.4 Magnetic Materials ; 801.4 Physical Chemistry ; 931.3 Atomic and Molecular Physics
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/312298
专题	物质科学与技术学院物质科学与技术学院_PI研究组_薛加民组物质科学与技术学院_PI研究组_柳仲楷组物质科学与技术学院_PI研究组_郭艳峰组物质科学与技术学院_公共科研平台_分析测试平台物质科学与技术学院_博士生物质科学与技术学院_PI研究组_李军组
通讯作者	Liu, Zhongkai; Ji, Wei; Li, Jun; Guo, Yanfeng
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Renmin Univ China, Dept Phys, Beijing 100190, Peoples R China 3.Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano De, Beijing 100190, Peoples R China 4.Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 5.ShanghaiTech Univ, Analyt Instrumentat Ctr, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 6.ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院; 上海科技大学
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Li, Zhengxian,Guo, Deping,Huang, Kui,et al. Robust Weak Antilocalization Effect Up to similar to 120 K in the van der Waals Crystal Fe5-x GeTe2 with Near-Room-Temperature Ferromagnetism[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2023,14(23):5456-5465.
APA	Li, Zhengxian.,Guo, Deping.,Huang, Kui.,Ma, Guodong.,Liu, Xiaolei.,...&Guo, Yanfeng.(2023).Robust Weak Antilocalization Effect Up to similar to 120 K in the van der Waals Crystal Fe5-x GeTe2 with Near-Room-Temperature Ferromagnetism.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,14(23),5456-5465.
MLA	Li, Zhengxian,et al."Robust Weak Antilocalization Effect Up to similar to 120 K in the van der Waals Crystal Fe5-x GeTe2 with Near-Room-Temperature Ferromagnetism".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 14.23(2023):5456-5465.