GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes

doi:10.1002/pssa.201800684

	GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes
	Sheikhi, Moheb 1,2; Xu, Houqiang 1,2; Jiang, Jie'an1,2,3 ; Wu, Sudong 1; Yang, Xi 1; Yang, Zhenhai 1; Liao, Mingdun 1; Guo, Wei 1; Ye, Jichun 1,2
	2019-02-20
发表期刊	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (IF:1.9[JCR-2023],1.9[5-Year])
ISSN	1862-6300
卷号	216 期号:4
发表状态	已发表
DOI	10.1002/pssa.201800684
摘要	Ni/Au nanomesh (NM) is utilized as the p-type contact in the ultraviolet (UV)-LEDs for improving the light extraction efficiency. The substitution of conventional planar Ni/Au p-type electrode with highly ordered, large scalable Ni/Au NMs results in enhanced light transmission in the p-type contact region of the UV-LEDs. Transmission over 75% is demonstrated for Ni/Au-NM thin film coated sapphire substrate, whereas light is totally blocked by conventional planar Ni/Au thin film. Linearized I-V characteristic between p-GaN and Ni/Au NMs is achieved by appropriate thermal annealing of the contact, and specific contact resistivity of 0.90 omega cm(2) is reported. UV-LED incorporated with Ni/Au NMs exhibits higher output power than that with planar contact due to enhanced light transmission through the metal network structure. Finally, simulation results suggest good agreement with experimental data, illustrating that Ni/Au NMs can serve as a potential candidate in the development of high efficiency UV optoelectronic devices.
关键词	light-emitting diodes light extraction efficiency nanomeshes ohmic behavior p-GaN contact specific contact resistivity
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Zhejiang Provincial Natural Science Foundation[LY15F040003]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000459177700004
出版者	WILEY-V C H VERLAG GMBH
WOS关键词	RESISTANCE OHMIC CONTACTS ; LIGHT-EMITTING-DIODES ; HIGH-PERFORMANCE ; FILMS ; UNIFORM
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/30412
专题	物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Guo, Wei; Ye, Jichun
作者单位	1.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Sheikhi, Moheb,Xu, Houqiang,Jiang, Jie'an,et al. GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2019,216(4).
APA	Sheikhi, Moheb.,Xu, Houqiang.,Jiang, Jie'an.,Wu, Sudong.,Yang, Xi.,...&Ye, Jichun.(2019).GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,216(4).
MLA	Sheikhi, Moheb,et al."GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 216.4(2019).