Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application

doi:10.3390/nano13061050

	Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application
	Zhang, Jiarui1,2 ; Fang, Wencheng 1; Wang, Ruobing 1; Li, Chengxing 1; Zheng, Jia 1; Zou, Xixi1,2 ; Song, Sannian 1; Song, Zhitang1,2 ; Zhou, Xilin 1
	2023-03-01
发表期刊	NANOMATERIALS
EISSN	2079-4991
卷号	13 期号:6
发表状态	已发表
DOI	10.3390/nano13061050
摘要	High density phase change memory array requires both minimized critical dimension (CD) and maximized process window for the phase change material layer. High in-wafer uniformity of the nanoscale patterning of chalcogenides material is challenging given the optical proximity effect (OPE) in the lithography process and the micro-loading effect in the etching process. In this study, we demonstrate an approach to fabricate high density phase change material arrays with half-pitch down to around 70 nm by the co-optimization of lithography and plasma etching process. The focused-energy matrix was performed to improve the pattern process window of phase change material on a 12-inch wafer. A variety of patternings from an isolated line to a dense pitch line were investigated using immersion lithography system. The collapse of the edge line is observed due to the OPE induced shrinkage in linewidth, which is deteriorative as the patterning density increases. The sub-resolution assist feature (SRAF) was placed to increase the width of the lines at both edges of each patterning by taking advantage of the optical interference between the main features and the assistant features. The survival of the line at the edges is confirmed with around a 70 nm half-pitch feature in various arrays. A uniform etching profile across the pitch line pattern of phase change material was demonstrated in which the micro-loading effect and the plasma etching damage were significantly suppressed by co-optimizing the etching parameters. The results pave the way to achieve high density device arrays with improved uniformity and reliability for mass storage applications.
关键词	phase change memory storage class memory SRAF optical proximity effect micro-loading effect
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收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China["62174168","92164302","62204251","62274170","91964204"] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB44010200] ; Science and Technology Council of Shanghai[22DZ2229009] ; Shanghai Pujiang Program[21PJ1415300]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000958209800001
出版者	MDPI
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/292195
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_宋志棠组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Song, Zhitang; Zhou, Xilin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Jiarui,Fang, Wencheng,Wang, Ruobing,et al. Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application[J]. NANOMATERIALS,2023,13(6).
APA	Zhang, Jiarui.,Fang, Wencheng.,Wang, Ruobing.,Li, Chengxing.,Zheng, Jia.,...&Zhou, Xilin.(2023).Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application.NANOMATERIALS,13(6).
MLA	Zhang, Jiarui,et al."Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application".NANOMATERIALS 13.6(2023).