Design and Fabrication of an Electrostatic AlN RF MEMS Switch for Near-Zero Power RF Wake-Up Receivers

doi:10.1109/JSEN.2018.2860593

	Design and Fabrication of an Electrostatic AlN RF MEMS Switch for Near-Zero Power RF Wake-Up Receivers
	Zhu, William Zicheng 1; Wu, Tao2,3 ; Chen, Guofeng 2; Cassella, Cristian 2; Assylbekova, Meruyert 2; Rinaldi, Matteo 2; McGruer, Nicol 2
	2018-12-15
发表期刊	IEEE SENSORS JOURNAL (IF:4.3[JCR-2023],4.2[5-Year])
ISSN	1530-437X
卷号	18 期号:24 页码:9902-9909
发表状态	已发表
DOI	10.1109/JSEN.2018.2860593
摘要	We describe an aluminum nitride (AlN)-based resonant switch for use in a near zero power radio frequency (RF) wake-up receiver. A folded beam structure with a slot compensates for the curvature caused by the stress gradient in the sputtered AlN film and ensures that the released contact gap is approximately equal to the designed contact gap. A 80 kHz resoswitch with a Q of 8600 and an actuation gap of approximately 600 nm turns on when a -4 dBm, 800 MHz signal, square wave modulated at 80 kHz, is applied to the actuator. This AlN electrostatic resonant switch is designed to enable integration with a high gain AlN RF piezoelectric transformer to form a complete ultra-low power RF receiver.
关键词	MEMS switch resoswitch wake-up receiver stress gradient zero power AlN aluminum nitride
收录类别	SCI ; SCIE ; EI ; CPCI
语种	英语
资助项目	DARPA Near-Zero Power RF and Sensor Operations Program[HR0011-15-2-0048]
WOS研究方向	Engineering ; Instruments & Instrumentation ; Physics
WOS类目	Engineering, Electrical & Electronic ; Instruments & Instrumentation ; Physics, Applied
WOS记录号	WOS:000450618800002
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
原始文献类型	Article ; Proceedings Paper
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/28979
专题	信息科学与技术学院_PI研究组_吴涛组
通讯作者	Zhu, William Zicheng; Wu, Tao
作者单位	1.Northeastern Univ, Dept Mech & Ind Engn, Boston, MA 02115 USA 2.Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA 3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
通讯作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zhu, William Zicheng,Wu, Tao,Chen, Guofeng,et al. Design and Fabrication of an Electrostatic AlN RF MEMS Switch for Near-Zero Power RF Wake-Up Receivers[J]. IEEE SENSORS JOURNAL,2018,18(24):9902-9909.
APA	Zhu, William Zicheng.,Wu, Tao.,Chen, Guofeng.,Cassella, Cristian.,Assylbekova, Meruyert.,...&McGruer, Nicol.(2018).Design and Fabrication of an Electrostatic AlN RF MEMS Switch for Near-Zero Power RF Wake-Up Receivers.IEEE SENSORS JOURNAL,18(24),9902-9909.
MLA	Zhu, William Zicheng,et al."Design and Fabrication of an Electrostatic AlN RF MEMS Switch for Near-Zero Power RF Wake-Up Receivers".IEEE SENSORS JOURNAL 18.24(2018):9902-9909.