Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

doi:10.1126/science.aai8142

	Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
	Reis, F.1,2; Li, G.3,4 ; Dudy, L.1,2; Bauernfeind, M.1,2; Glass, S.1,2; Hanke, W.4; Thomale, R.4; Schafer, J.1,2; Claessen, R.1,2
	2017-07-21
发表期刊	SCIENCE
ISSN	0036-8075
卷号	357 期号:6348 页码:287-290
发表状态	已发表
DOI	10.1126/science.aai8142
摘要	Quantum spin Hall materials hold the promise of revolutionary devices with dissipationless spin currents but have required cryogenic temperatures owing to small energy gaps. Here we show theoretically that a room-temperature regime with a large energy gap may be achievable within a paradigm that exploits the atomic spin-orbit coupling. The concept is based on a substrate-supported monolayer of a high-atomic number element and is experimentally realized as a bismuth honeycomb lattice on top of the insulating silicon carbide substrate SiC(0001). Using scanning tunneling spectroscopy, we detect a gap of similar to 0.8 electron volt and conductive edge states consistent with theory. Our combined theoretical and experimental results demonstrate a concept for a quantum spin Hall wide-gap scenario, where the chemical potential resides in the global system gap, ensuring robust edge conductance.
收录类别	SCI
语种	英语
资助项目	European Research Council (ERC) through starting grant[ERC-StG-Thomale-336012]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000405901600037
出版者	AMER ASSOC ADVANCEMENT SCIENCE
WOS关键词	EPITAXIAL-GROWTH ; SURFACE
原始文献类型	Article
通讯作者	Schafer, J.
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2887
专题	物质科学与技术学院物质科学与技术学院_PI研究组_李刚组
通讯作者	Schafer, J.
作者单位	1.Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany 2.Univ Wurzburg, Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
推荐引用方式 GB/T 7714	Reis, F.,Li, G.,Dudy, L.,et al. Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material[J]. SCIENCE,2017,357(6348):287-290.
APA	Reis, F..,Li, G..,Dudy, L..,Bauernfeind, M..,Glass, S..,...&Claessen, R..(2017).Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material.SCIENCE,357(6348),287-290.
MLA	Reis, F.,et al."Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material".SCIENCE 357.6348(2017):287-290.