Plasma assisted approaches toward high quality transferred synthetic graphene for electronics

doi:10.1088/2632-959X/acbc91

	Plasma assisted approaches toward high quality transferred synthetic graphene for electronics
	Wang, Yibo 1,2; Wang, Huishan 1,2; Jiang, Chengxin1,2,3 ; Chen, Xipin 4; Chen, Chen 1,2; Kong, Ziqiang 1,2; Wang, Haomin 1,2
	2023-03-01
发表期刊	NANO EXPRESS; (IF:2.7[JCR-2023],2.7[5-Year])
ISSN	2632-959X
EISSN	2632-959X
卷号	4 期号:1
发表状态	已发表
DOI	10.1088/2632-959X/acbc91
摘要	Graphene has received much attention in multiple fields due to its unique physical and electrical properties, especially in the microelectronic application. Nowadays, graphene can be catalytically produced on active substrates by chemical vapor deposition and then transferred to the target substrates. However, the widely used wet transfer technique often causes inevitable structural damage and surface contamination to the synthetic CVD graphene, thus hindering its application in high-performance devices. There have been numerous reviews on graphene growth and transfer techniques. Thus, this review is not intended to be comprehensive; instead, we focus on the advanced plasma treatment, which may play an important role in the quality improvement throughout the growth and transfer of graphene. Promising pathways for future applications are also provided.
关键词	CVD graphene imperfections plasma repair transfer
学科门类	Biomaterials ; Electronic, Optical and Magnetic Materials ; Polymers and Plastics ; Materials Science (miscellaneous)
URL	查看原文
收录类别	EI ; SCOPUS
语种	英语
出版者	Institute of Physics
EI入藏号	20231113697256
EI主题词	Graphene
EI分类号	761 Nanotechnology ; 802.2 Chemical Reactions ; 804 Chemical Products Generally ; 932.3 Plasma Physics
原始文献类型	Review
Scopus 记录号	2-s2.0-85149562481
来源库	SCOPUS
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/286505
专题	物质科学与技术学院物质科学与技术学院_博士生
通讯作者	Wang, Huishan; Wang, Haomin
作者单位	1.State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai,200050,China; 2.Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,100049,China; 3.School of Physical Science and Technology,ShanghaiTech University,Shanghai,201210,China; 4.International Department,The Affiliated High School of South China Normal University,Guangzhou,510630,China
推荐引用方式 GB/T 7714	Wang, Yibo,Wang, Huishan,Jiang, Chengxin,et al. Plasma assisted approaches toward high quality transferred synthetic graphene for electronics[J]. NANO EXPRESS;,2023,4(1).
APA	Wang, Yibo.,Wang, Huishan.,Jiang, Chengxin.,Chen, Xipin.,Chen, Chen.,...&Wang, Haomin.(2023).Plasma assisted approaches toward high quality transferred synthetic graphene for electronics.NANO EXPRESS;,4(1).
MLA	Wang, Yibo,et al."Plasma assisted approaches toward high quality transferred synthetic graphene for electronics".NANO EXPRESS; 4.1(2023).