Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires

doi:10.1186/s11671-017-2243-1

	Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires
	Zhu, Zhongyunshen1,2 ; Song, Yuxin 1; Chen, Qimiao 1,3; Zhang, Zhenpu1,2 ; Zhang, Liyao 1; Li, Yaoyao 1; Wang, Shumin1,4
	2017-07-28
发表期刊	NANOSCALE RESEARCH LETTERS (IF:5.5[JCR-2023],5.5[5-Year])
ISSN	1556-276X
卷号	12
发表状态	已发表
DOI	10.1186/s11671-017-2243-1
摘要	We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is calculated in different situations. The result indicates that the Ge nanowire on GaSb is apt to grow along < 100 > rather than < 110 > in the two situations and prefers to be exposed by {105} facets when deposited a small amount of Ge but to be exposed by {110} when the amount of Ge exceeds a critical value. Furthermore, the conduction band minima in Gamma-valley at any position in both situations exhibits lower values than those in L-valley, leading to direct bandgap transition in Ge nanowire. For the valence band, the light hole band maxima at Gamma-point is higher than the heavy hole band maxima at any position and even higher than the conduction band minima for the hydrostatic strain more than similar to 5.0%, leading to a negative bandgap. In addition, both electron and hole mobility can be enhanced by owing to the decrease of the effective mass under highly tensile strain. The results suggest that biaxially tensile-strained Ge nanowires hold promising properties in device applications.
关键词	Tensile strain Ge nanowire Finite element method Direct bandgap Mobility
收录类别	SCI ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000406838000002
出版者	SPRINGER
EI入藏号	20173104010397
EI主题词	Carrier mobility ; Conduction bands ; Energy gap ; Finite element method ; Germanium ; Hole mobility ; Nanowires ; Semiconductor quantum wells
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Numerical Methods:921.6 ; Mechanics:931.1 ; High Energy Physics:932.1 ; Solid State Physics:933
WOS关键词	FIELD-EFFECT TRANSISTORS ; QUANTUM DOTS ; SURFACE-ENERGY ; LIGHT-EMISSION ; GE NANOWIRES ; HETEROSTRUCTURES ; GROWTH ; SI
原始文献类型	Article
通讯作者	Song, Yuxin ; Wang, Shumin
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2841
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Song, Yuxin; Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhu, Zhongyunshen,Song, Yuxin,Chen, Qimiao,et al. Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires[J]. NANOSCALE RESEARCH LETTERS,2017,12.
APA	Zhu, Zhongyunshen.,Song, Yuxin.,Chen, Qimiao.,Zhang, Zhenpu.,Zhang, Liyao.,...&Wang, Shumin.(2017).Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires.NANOSCALE RESEARCH LETTERS,12.
MLA	Zhu, Zhongyunshen,et al."Theoretical Investigation of Biaxially Tensile-Strained Germanium Nanowires".NANOSCALE RESEARCH LETTERS 12(2017).