General trends for the effect of ionic substitution on the band gap of MAPbX(3)
2017-09
发表期刊SOLID STATE COMMUNICATIONS (IF:2.1[JCR-2023],1.9[5-Year])
ISSN0038-1098
卷号264页码:35-38
发表状态已发表
DOI10.1016/j.ssc.2017.07.015
摘要Perovskites are diverse materials to explore for advanced functional applications, but experimental or computational characterization of individual perovskite compositions is inefficient considering nearly endless possible combinations of the constituent ions. We analyze the band edges of a semiconducting perovskite by constructing electronic wavefunctions based on orbital symmetries, and then extract such information as electron wavevectors, band-edge transition, and chemical bonding. Using MAPbX(3) (MA = methylammonium; X = Br, I), CsCdBr3, CsCaBr3, and TMASn(N-3)(3) (TMA = tetramethylammonium) as prototypical perovskites, we propose a set of trends on whether ionic substitution changes MAPbX(3) from a direct band gap to an indirect one. Compositions containing an s(2) metal cation and a (pseudo) halide are found to exhibit a direct band gap as MAPbX(3) does. The broad applicability of these trends, verified by an extensive range of perovskite compositions, indicates that pseudohalide perovskites should be explored for novel functional materials, and that substitution of Pb2+ in MAPbI(3) by non-s(2) metal cations will probably deteriorate the optoelectronic properties of MAPbI(3).
关键词Semiconductors Elemental composition Perovskites Electronic band structure
收录类别SCI ; EI
语种英语
资助项目National Science Foundation of China[21403141]
WOS研究方向Physics
WOS类目Physics, Condensed Matter
WOS记录号WOS:000410843900008
出版者PERGAMON-ELSEVIER SCIENCE LTD
EI入藏号20173103994591
EI主题词Characterization ; Chemical analysis ; Chemical bonds ; Energy gap ; Functional materials ; Lead ; Metal halides ; Positive ions
EI分类号Minerals:482.2 ; Lead and Alloys:546.1 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Materials Science:951
WOS关键词PEROVSKITE SOLAR-CELLS ; ELECTRONIC-STRUCTURE ; HYBRID PEROVSKITES ; OPTICAL-PROPERTIES ; HALIDE ; HALOGEN ; SEMICONDUCTORS
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2829
专题物质科学与技术学院
物质科学与技术学院_特聘教授组_李圣刚组
物质科学与技术学院_PI研究组_米启兮组
物质科学与技术学院_特聘教授组_黄富强组
物质科学与技术学院_硕士生
通讯作者Mi, Qixi
作者单位
1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.Chinese Acad Sci, Shanghai Adv Res Inst, CAS Key Lab Low Carbon Convers Sci & Engn, Shanghai 201203, Peoples R China
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院
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GB/T 7714
Qiu, Dechun,Huang, Fuqiang,Li, Shenggang,et al. General trends for the effect of ionic substitution on the band gap of MAPbX(3)[J]. SOLID STATE COMMUNICATIONS,2017,264:35-38.
APA Qiu, Dechun,Huang, Fuqiang,Li, Shenggang,&Mi, Qixi.(2017).General trends for the effect of ionic substitution on the band gap of MAPbX(3).SOLID STATE COMMUNICATIONS,264,35-38.
MLA Qiu, Dechun,et al."General trends for the effect of ionic substitution on the band gap of MAPbX(3)".SOLID STATE COMMUNICATIONS 264(2017):35-38.
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