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All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor | |
2018-10 | |
发表期刊 | ANGEWANDTE CHEMIE-INTERNATIONAL EDITION (IF:16.1[JCR-2023],16.2[5-Year]) |
ISSN | 1433-7851 |
卷号 | 57期号:40页码:13154-13158 |
发表状态 | 已发表 |
DOI | 10.1002/anie.201807674 |
摘要 | Hybrid organic-inorganic perovskites, especially methylammonium lead triiodide (MAPbI(3)), are intensely studied for their optoelectronic properties. The organic MA(+) cation is held responsible for the superior performance of MAPbI(3) but also its instability toward moisture and heat. To explore compositions beyond MAPbI(3), we performed experiments and calculations on two isomorphous perovskites CsSnBr3 and MASnBr(3). CsSnBr3 is slightly smaller than MASnBr(3) in cell dimension, but outperforms MASnBr(3) in band gap energy, charge-carrier reduced effective mass, and optical dielectric constant all by approximate to 19%. These merits accumulate to drastically cut the exciton binding energy from 33 meV for MASnBr(3) to 19.6 meV for CsSnBr3, making CsSnBr3 a black, free-carrier semiconductor. CsSnBr3 also exhibits distinctly higher stability toward moisture and heat than its organic counterparts. These advantages suggest ecofriendly applications for CsSnBr3, such as tandem solar cells and direct X-ray detectors. |
关键词 | cesium perovskite phases semiconductors structure-activity relationships tin |
收录类别 | EI ; SCIE ; SCI |
语种 | 英语 |
资助项目 | Shell-CAS Frontier Sciences Program[PT78963] |
WOS研究方向 | Chemistry |
WOS类目 | Chemistry, Multidisciplinary |
WOS记录号 | WOS:000445445700026 |
出版者 | WILEY-V C H VERLAG GMBH |
EI入藏号 | 20183805836622 |
EI主题词 | Binding energy ; Bromine compounds ; Cesium ; Cesium compounds ; Energy gap ; Lead compounds ; Moisture ; organic-inorganic materials ; Perovskite ; Semiconducting tin compounds ; Semiconductor materials ; Semiconductor quantum wells ; Tin ; Tin compounds ; X ray detectors |
WOS关键词 | METHYLAMMONIUM LEAD IODIDE ; EXCITON BINDING-ENERGY ; SOLAR-CELLS ; HALIDE PEROVSKITES ; OPTICAL-ABSORPTION ; SINGLE-CRYSTALS ; BAND-GAP ; BR ; SUBSTITUTION ; EFFICIENCY |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/27797 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_米启兮组 物质科学与技术学院_硕士生 物质科学与技术学院_本科生 物质科学与技术学院_博士生 |
通讯作者 | Mi, Qixi |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Li, Binghan,Long, Ruiying,Xia, Yu,et al. All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor[J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,2018,57(40):13154-13158. |
APA | Li, Binghan,Long, Ruiying,Xia, Yu,&Mi, Qixi.(2018).All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor.ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,57(40),13154-13158. |
MLA | Li, Binghan,et al."All-Inorganic Perovskite CsSnBr3 as a Thermally Stable, Free-Carrier Semiconductor".ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 57.40(2018):13154-13158. |
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