Large-gap quantum anomalous Hall states induced by functionalizing buckled Bi-III monolayer/ Al2 O3

doi:10.1103/PhysRevB.106.125151

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	Large-gap quantum anomalous Hall states induced by functionalizing buckled Bi-III monolayer/ Al2 O3
	Jin, Suhua1 ; Xia, Yunyouyou1,2 ; Shi, Wujun3,4 ; Hu, Jiayu1 ; Claessen, Ralph 5,6; Hanke, Werner 6,7; Thomale, Ronny 6,7; Li, Gang1,2
	2022-09-15
发表期刊	PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year])
ISSN	2469-9950
EISSN	2469-9969
卷号	106 期号:12
发表状态	已发表
DOI	10.1103/PhysRevB.106.125151
摘要	Chiral edge modes inherent to the topological quantum anomalous Hall (QAH) effect are a pivotal topic of contemporary condensed matter research aiming at future quantum technology and application in spintronics. A large topological gap is vital to protecting against thermal fluctuations and thus enabling a higher operating temperature. From first-principles calculations, we propose Al2O3 as an ideal substrate for atomic monolayers consisting of Bi and group-III elements, in which a large-gap quantum spin Hall effect can be realized. Additional half-passivation with nitrogen then suggests a topological phase transition to a large-gap QAH insulator. By effective tight-binding modeling, we demonstrate that Bi-III monolayer/Al2O3 is dominated by px,py orbitals, with subdominant pz orbital contributions. The topological phase transition into the QAH is induced by Zeeman splitting, where the off-diagonal spin exchange does not play a significant role. The effective model analysis promises utility far beyond Bi-III monolayer/Al2O3, as it should generically apply to systems dominated by px,py orbitals with a band inversion at Γ. © 2022 American Physical Society.
关键词	Alumina Aluminum oxide Bismuth compounds Calculations Crystal symmetry Quantum Hall effect Quantum theory Spin Hall effect Topology Anomalous hall effects Condensed matter Hall state High operating temperature Orbitals Quantum applications Quantum technologies Technologies and applications Thermal fluctuations Topological phase
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收录类别	EI ; SCI
语种	英语
资助项目	National Key R&D Program of China[2017YFE0131300] ; Sino-German mobility program[M-0006] ; National Natural Science Foundation of China[11874263] ; Shanghai Technology Innovation Action Plan 2020-Integrated Circuit Technology Support Program[20DZ1100605] ; Science and Technology Commission of Shanghai Municipality (STCSM)[22ZR1441800] ; Shanghai-XFEL Beamline Project[31011505505885920161A2101001] ; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)["258499086 -SFB 1170","390858490 -EXC 2147"]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000905182800004
出版者	American Physical Society
EI入藏号	20224112869895
EI主题词	Monolayers
EI分类号	701.2 Magnetism: Basic Concepts and Phenomena ; 804.2 Inorganic Compounds ; 921 Mathematics ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931 Classical Physics ; Quantum Theory ; Relativity ; 931.4 Quantum Theory ; Quantum Mechanics ; 933.1.1 Crystal Lattice
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/241075
专题	大科学中心物质科学与技术学院_PI研究组_李刚组物质科学与技术学院_硕士生物质科学与技术学院_公共科研平台_拓扑物理实验室大科学中心_公共科研平台_大科学装置建设部
通讯作者	Li, Gang
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 3.ShanghaiTech Univ, Ctr Transfonnat Sci, Shanghai 201210, Peoples R China 4.ShanghaiTech Univ, Shanghai High Repetit Rate XFEL & Extreme Light F, Shanghai 201210, Peoples R China 5.Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany 6.Univ Wurzburg, Wurzburg Dresden Cluster Excellence Ct Qmat, D-97074 Wurzburg, Germany 7.Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院; 上海科技大学
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Jin, Suhua,Xia, Yunyouyou,Shi, Wujun,et al. Large-gap quantum anomalous Hall states induced by functionalizing buckled Bi-III monolayer/ Al2 O3[J]. PHYSICAL REVIEW B,2022,106(12).
APA	Jin, Suhua.,Xia, Yunyouyou.,Shi, Wujun.,Hu, Jiayu.,Claessen, Ralph.,...&Li, Gang.(2022).Large-gap quantum anomalous Hall states induced by functionalizing buckled Bi-III monolayer/ Al2 O3.PHYSICAL REVIEW B,106(12).
MLA	Jin, Suhua,et al."Large-gap quantum anomalous Hall states induced by functionalizing buckled Bi-III monolayer/ Al2 O3".PHYSICAL REVIEW B 106.12(2022).