High-T-c superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene
Jiang, Da1; Hu, Tao1; You, Lixing1; Li, Qiao1; Li, Ang1; Wang, Haomin1; Mu, Gang1; Chen, Zhiying1; Zhang, Haoran1; Yu, Guanghui1; Zhu, Jie2; Sun, Qiujuan1,3; Lin, Chengtian4; Xiao, Hong5; Xie, Xiaoming1,6; Jiang, Mianheng1,6
2014-12
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume5
Status已发表
DOI10.1038/ncomms6708
AbstractHigh-T-c superconductors confined to two dimension exhibit novel physical phenomena, such as superconductor-insulator transition. In the Bi2Sr2CaCu2O8+x (Bi2212) model system, despite extensive studies, the intrinsic superconducting properties at the thinness limit have been difficult to determine. Here, we report a method to fabricate high quality single-crystal Bi2212 films down to half-unit-cell thickness in the form of graphene/Bi2212 van der Waals heterostructure, in which sharp superconducting transitions are observed. The heterostructure also exhibits a nonlinear current-voltage characteristic due to the Dirac nature of the graphene band structure. More interestingly, although the critical temperature remains essentially the same with reduced thickness of Bi2212, the slope of the normal state T-linear resistivity varies by a factor of 4-5, and the sheet resistance increases by three orders of magnitude, indicating a surprising decoupling of the normal state resistance and superconductivity. The developed technique is versatile, applicable to investigate other two-dimensional (2D) superconducting materials.
Indexed BySCI
Language英语
Funding ProjectMinistry of Science and Technology of China[2011CBA00107] ; Ministry of Science and Technology of China[2012CB921302]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000347229300004
PublisherNATURE PUBLISHING GROUP
WOS KeywordINSULATOR-TRANSITION ; FILMS ; BEHAVIOR ; HETEROSTRUCTURES ; SUPERLATTICES ; LA2-XSRXCUO4 ; ENHANCEMENT ; RESISTIVITY ; DEPENDENCE ; INTERFACES
Original Document TypeArticle
Citation statistics
Cited Times:45[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2358
Collection物质科学与技术学院_特聘教授组_谢晓明组
物质科学与技术学院
Corresponding AuthorJiang, Da
Affiliation1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Tongji Univ, Inst Precis Opt Engn, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
3.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China
4.Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
5.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Recommended Citation
GB/T 7714
Jiang, Da,Hu, Tao,You, Lixing,et al. High-T-c superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene[J]. NATURE COMMUNICATIONS,2014,5.
APA Jiang, Da.,Hu, Tao.,You, Lixing.,Li, Qiao.,Li, Ang.,...&Jiang, Mianheng.(2014).High-T-c superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene.NATURE COMMUNICATIONS,5.
MLA Jiang, Da,et al."High-T-c superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene".NATURE COMMUNICATIONS 5(2014).
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