Optimizing Set Performance for Phase Change Memory with Dual Pulses Set Method

doi:10.1149/2.0041507ssl

	Optimizing Set Performance for Phase Change Memory with Dual Pulses Set Method
	Wang, Yueqing 1,2; Cai, Daolin 1; Chen, Yifeng 1; Wang, Yuchan 1,2; Wei, Hongyang 1,2; Huo, Ruru1,3 ; Chen, Xiaogang 1; Song, Zhitang 1
	2015
发表期刊	ECS SOLID STATE LETTERS (IF:1.184[JCR-2016],1.265[5-Year])
ISSN	2162-8742
卷号	4 期号:7 页码:Q32-Q35
发表状态	已发表
DOI	10.1149/2.0041507ssl
摘要	Applying a high power pulse (HPP) before the standard single box SET pulse accelerates the crystallization process and reduces the SET resistance of phase change memory (PCM) cells. The effects of HPP on SET resistance distribution are characterized and analyzed. Dual pulses SET method (D-SET) is proposed and compared with some conventional SET methods. The results gathered across a 16 Kbits block of a 64 Mbits PCM test chip in 40 nm CMOS process show that D-SET achieves the fastest SET speed, the narrowest SET resistance distribution and smallest drift coefficient with set time of 300 ns. (C) 2015 The Electrochemical Society. All rights reserved.
收录类别	SCI ; EI
语种	英语
资助项目	Science and Technology Council of Shanghai[12nm0503701] ; Science and Technology Council of Shanghai[13DZ2295700] ; Science and Technology Council of Shanghai[12QA1403900] ; Science and Technology Council of Shanghai[13ZR1447200] ; Science and Technology Council of Shanghai[14ZR1447500]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000356879700004
出版者	ELECTROCHEMICAL SOC INC
EI入藏号	20152200894341
EI主题词	CMOS integrated circuits ; Transients
EI分类号	Nuclear Reactors:621 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2330
专题	物质科学与技术学院物质科学与技术学院_硕士生
通讯作者	Wang, Yueqing
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat & Nanotechnol La, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100080, Peoples R China 3.Shanghaitech Univ, Shanghai 200031, Peoples R China
推荐引用方式 GB/T 7714	Wang, Yueqing,Cai, Daolin,Chen, Yifeng,et al. Optimizing Set Performance for Phase Change Memory with Dual Pulses Set Method[J]. ECS SOLID STATE LETTERS,2015,4(7):Q32-Q35.
APA	Wang, Yueqing.,Cai, Daolin.,Chen, Yifeng.,Wang, Yuchan.,Wei, Hongyang.,...&Song, Zhitang.(2015).Optimizing Set Performance for Phase Change Memory with Dual Pulses Set Method.ECS SOLID STATE LETTERS,4(7),Q32-Q35.
MLA	Wang, Yueqing,et al."Optimizing Set Performance for Phase Change Memory with Dual Pulses Set Method".ECS SOLID STATE LETTERS 4.7(2015):Q32-Q35.