Advanced Surface Acoustic Wave Resonators on LiTaO3/SiO2/sapphire Substrate

doi:10.1109/LED.2022.3200418

	Advanced Surface Acoustic Wave Resonators on LiTaO3/SiO2/sapphire Substrate
	Jinbo Wu 1; Shibin Zhang 2; Yang Chen 3; Pengcheng Zheng 3; Liping Zhang 3; Hulin Yao 3; Zhongxu Li 3; Xiaomeng Zhao 2; Kai Huang 2; Tao Wu4 ; Xin Ou 3
	2022-10-01
发表期刊	IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year])
ISSN	0741-3106
EISSN	1558-0563
卷号	43 期号:10 页码:1-1
发表状态	已发表
DOI	10.1109/LED.2022.3200418
摘要	The shear horizontal surface acoustic wave (SH-SAW) resonators with excellent quality factor and temperature stability were fabricated on 42YX-LiTaO3/SiO2/sapphire substrate. For comparison, the 4-inch LiTaO3/SiO2/sapphire (fully insulating LiTaO3-on-insulator, FI-LTOI) and LiTaO3/SiO2/poly-Si/Si (trap-rich layer assisted LiTaO3-on-insulator, TR-LTOI) substrates are prepared by ion-cutting process. The GHz acoustic delay lines (ADLs) built on FI-LTOI exhibit a propagation loss of only 2.95 dB/mm, which is 37.5% smaller than the 4.72 dB/mm of the ADLs on TR-LTOI. The demonstrated SH-SAW resonators on FI-LTOI exhibit higher Q-values than those on TR-LTOI. Among them, a FI-LTOI based resonator with the resonant frequency of 1.76 GHz exhibits a maximum Bode-Q (Qmax) of 4,421, an effective electromechanical coupling coefficient of 13.34%, an excellent figure of merit of 589.8, and a well-compensated temperature coefficient of frequency of -9.1 ppm/C. More importantly, the Qmax of the FI-LTOI based resonator is maintained well (2,791) even at 200 C whereas that of the TR-LTOI based resonator decreased to 674. Overall, the FI-LTOI substrate may serve as an advanced material platform of SAW devices for 5G-FR1 bands. IEEE
关键词	Acoustic surface wave devices Acoustic waves Electromechanical coupling Lithium compounds Natural frequencies Sawing Shear flow Substrates Tantalum compounds LiTaO_{Parasitic surface conduction} RF loss Sapphire substrates Shear-horizontal modes Surface acoustic wave resonators Temperature coefficient-of-frequency Xmlns:mml=" Xmlns:xlink=" Xmlns:xsi="
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收录类别	EI ; SCIE
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20223512674130
EI主题词	Temperature
EI分类号	631.1 Fluid Flow, General ; 641.1 Thermodynamics ; 751.1 Acoustic Waves ; 752.1 Acoustic Devices
原始文献类型	Article in Press
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/226412
专题	信息科学与技术学院信息科学与技术学院_PI研究组_吴涛组
作者单位	1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai, China 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China 4.School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, China
推荐引用方式 GB/T 7714	Jinbo Wu,Shibin Zhang,Yang Chen,et al. Advanced Surface Acoustic Wave Resonators on LiTaO3/SiO2/sapphire Substrate[J]. IEEE ELECTRON DEVICE LETTERS,2022,43(10):1-1.
APA	Jinbo Wu.,Shibin Zhang.,Yang Chen.,Pengcheng Zheng.,Liping Zhang.,...&Xin Ou.(2022).Advanced Surface Acoustic Wave Resonators on LiTaO3/SiO2/sapphire Substrate.IEEE ELECTRON DEVICE LETTERS,43(10),1-1.
MLA	Jinbo Wu,et al."Advanced Surface Acoustic Wave Resonators on LiTaO3/SiO2/sapphire Substrate".IEEE ELECTRON DEVICE LETTERS 43.10(2022):1-1.