Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

doi:10.1038/ncomms7499

	Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride
	Tang, Shujie 1,2; Wang, Haomin 1; Wang, Hui Shan 1,3; Sun, Qiujuan 1,3; Zhang, Xiuyun 4; Cong, Chunxiao 5; Xie, Hong 1; Liu, Xiaoyu 1; Zhou, Xiaohao 6; Huang, Fuqiang 7; Chen, Xiaoshuang 6; Yu, Ting 5; Ding, Feng 4; Xie, Xiaoming1,8 ; Jiang, Mianheng1,8
	2015-03
发表期刊	NATURE COMMUNICATIONS
ISSN	2041-1723
卷号	6
发表状态	已发表
DOI	10.1038/ncomms7499
摘要	The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only B1 mm with a growth rate of B1 nmmin similar to 1 or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to B1 mm min similar to 1, thereby promoting graphene domains up to 20 mm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm(2)V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.
收录类别	SCI
语种	英语
资助项目	Science and Technology Commission of Shanghai Municipality[12JC1410100] ; Science and Technology Commission of Shanghai Municipality[12JC1403900]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000352719700001
出版者	NATURE PUBLISHING GROUP
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; HIGH-QUALITY ; MONOLAYER GRAPHENE ; DIRAC FERMIONS ; FILMS ; NUCLEATION ; GRAINS ; BN ; CU
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2251
专题	物质科学与技术学院_特聘教授组_谢晓明组物质科学与技术学院
通讯作者	Wang, Haomin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 3.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China 4.Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon 999077, Hong Kong, Peoples R China 5.Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore 6.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China 8.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
推荐引用方式 GB/T 7714	Tang, Shujie,Wang, Haomin,Wang, Hui Shan,et al. Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride[J]. NATURE COMMUNICATIONS,2015,6.
APA	Tang, Shujie.,Wang, Haomin.,Wang, Hui Shan.,Sun, Qiujuan.,Zhang, Xiuyun.,...&Jiang, Mianheng.(2015).Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride.NATURE COMMUNICATIONS,6.
MLA	Tang, Shujie,et al."Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride".NATURE COMMUNICATIONS 6(2015).