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Focused ion beam preparation of halide perovskite microscopy specimens: evaluation of the beam induced damage | |
2022-10-12 | |
发表期刊 | JOURNAL OF PHYSICS CONDENSED MATTER (IF:2.3[JCR-2023],2.2[5-Year]) |
ISSN | 0953-8984 |
EISSN | 1361-648X |
卷号 | 34期号:41 |
发表状态 | 已发表 |
DOI | 10.1088/1361-648X/ac8404 |
摘要 | Focused ion beam (FIB) is currently one of the most commonly used methods for preparing transmission electron microscopy bulk specimens. However, for ion beam-sensitive materials such as halide perovskites, the ion beam milling process can easily cause decomposition and structure damage to the specimen. Here we investigate the influence factors of ion beam damage theoretically and experimentally, and successfully obtain the high-resolution transmission electron microscopy image of inorganic halide perovskite sample prepared by FIB. Theoretical investigations indicate that the temperature rises extremely fast for ion beam milling, reaching more than 80% of the highest temperature in less than one picosecond. Experimental investigations of halide perovskites in various forms (nanostructures, thin film devices, and single crystals) suggest choosing appropriate FIB acceleration voltage and beam current together with strategies to reduce the milling time may alleviate structure damage. © 2022 IOP Publishing Ltd. |
关键词 | Crystal structure Film preparation Focused ion beams Ions Milling (machining) Perovskite Thin film devices Transmissions Beam damage BULK SPECIMENS Focused ion beam milling Focused ions beams Halide perovskites Induced damage Ion-beam milling Sensitive materials Structure damage TEM sample preparation |
URL | 查看原文 |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | Shanghai Science and technology Plan[21DZ 2260400] |
WOS研究方向 | Physics |
WOS类目 | Physics, Condensed Matter |
WOS记录号 | WOS:000836441200001 |
出版者 | Institute of Physics |
EI入藏号 | 20223312559771 |
EI主题词 | High resolution transmission electron microscopy |
EI分类号 | 482.2 Minerals ; 602.2 Mechanical Transmissions ; 604.2 Machining Operations ; 714.2 Semiconductor Devices and Integrated Circuits ; 741.3 Optical Devices and Systems ; 932.1 High Energy Physics ; 933.1.1 Crystal Lattice |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/214830 |
专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_PI研究组_宁志军组 物质科学与技术学院_PI研究组_米启兮组 物质科学与技术学院_PI研究组_于奕组 物质科学与技术学院_博士生 |
通讯作者 | Yu, Yi |
作者单位 | 1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 2.ShanghaiTech Univ, Shanghai Key Lab High Resolut Electron Microscopy, Shanghai, Peoples R China 3.Purdue Univ, Davidson Sch Chem Engn, W Lafayette, IN 47907 USA |
第一作者单位 | 物质科学与技术学院; 上海科技大学 |
通讯作者单位 | 物质科学与技术学院; 上海科技大学 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Lu, Yuan,Wang, Hao,Chen, Yi,et al. Focused ion beam preparation of halide perovskite microscopy specimens: evaluation of the beam induced damage[J]. JOURNAL OF PHYSICS CONDENSED MATTER,2022,34(41). |
APA | Lu, Yuan.,Wang, Hao.,Chen, Yi.,Akriti.,Hu, Xiangchen.,...&Yu, Yi.(2022).Focused ion beam preparation of halide perovskite microscopy specimens: evaluation of the beam induced damage.JOURNAL OF PHYSICS CONDENSED MATTER,34(41). |
MLA | Lu, Yuan,et al."Focused ion beam preparation of halide perovskite microscopy specimens: evaluation of the beam induced damage".JOURNAL OF PHYSICS CONDENSED MATTER 34.41(2022). |
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