Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices

doi:10.1109/TED.2022.3188242

	Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices
	Zilu Guo1,2,3 ; Wenjuan Wang 1,4; Yangjun Li 1; Huidan Qu 1; Liuyan Fan 1; Xiren Chen 1; Yicheng Zhu 1; Yue Gu 1; Yajie Wang 5; Changlin Zheng 5; Pingping Chen 1; Wei Lu1,2,3,4
	2022
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	1557-9646
卷号	69 期号:9 页码:4944-4949
发表状态	已发表
DOI	10.1109/TED.2022.3188242
摘要	An In0.53Ga0.47As/indium phosphide (InP) avalanche photodiode (APD) with a separate absorption, grading, charge, and multiplication (SAGCM) structure is epitaxially grown by molecular beam epitaxy (MBE). The resulting material is studied using X-ray diffraction (XRD), photoluminescence (PL), and scanning transmission electron microscopy. The activation energy extracted from the dark current of the APD indicates that it is dominated by the generation–recombination (G–R) process. Deep low-temperature PL peaks reveal the existence of an ${E}_{v} + 0.42$ -eV deep energy level defect in the indium–gallium–arsenide (InGaAs) absorber layer, which is considered to be a result of point defects caused by Ga-poor or In-poor MBE growth conditions. The effect of the defect on the dark current is confirmed using numerical calculation methods.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/214780
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_陆卫组物质科学与技术学院_博士生
作者单位	1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China 2.University of the Chinese Academy of Sciences, Beijing, China 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai, China 4.Shanghai Research Center for Quantum Sciences, Shanghai, China 5.State Key Laboratory of Surface Physics and the Department of Physics, Fudan University, Shanghai, China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zilu Guo,Wenjuan Wang,Yangjun Li,et al. Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2022,69(9):4944-4949.
APA	Zilu Guo.,Wenjuan Wang.,Yangjun Li.,Huidan Qu.,Liuyan Fan.,...&Wei Lu.(2022).Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices.IEEE TRANSACTIONS ON ELECTRON DEVICES,69(9),4944-4949.
MLA	Zilu Guo,et al."Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode Devices".IEEE TRANSACTIONS ON ELECTRON DEVICES 69.9(2022):4944-4949.