High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure

doi:10.1021/acsami.8b02390

	High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure
	Zhang, Qing4,5,6 ; Shao, Shuangshuang 1; Chen, Zheng 1,2; Pecunia, Vincenzo 3; Xia, Kai 3; Zhao, Jianwen 1; Cui, Zheng 1
	2018-05-09
发表期刊	ACS APPLIED MATERIALS & INTERFACES (IF:8.3[JCR-2023],8.7[5-Year])
ISSN	1944-8244
卷号	10 期号:18 页码:15847-15854
发表状态	已发表
DOI	10.1021/acsami.8b02390
摘要	A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane. Photolithographic exposure from backside using bottom-gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 mu m width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 10(8), maximum mobility of 3.3 cm(2)V(-1)s(-1), negligible hysteresis, and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high-resolution printing displays.
关键词	inkjet printing metal oxide surface-energy pattern self-aligned PMSQ
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	National Natural Science Foundation of China[61750110517]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000432205800059
出版者	AMER CHEMICAL SOC
EI入藏号	20182005198048
EI主题词	Electrodes ; Hydrophilicity ; Hydrophobicity ; Ink jet printers ; Ink jet printing ; Metals ; Printing presses ; Refractory metal compounds ; Semiconducting indium compounds ; Substrates ; Thin film circuits ; Thin films
EI分类号	Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Printing:745.1 ; Printing Equipment:745.1.1 ; Organic Compounds:804.1 ; Physical Properties of Gases, Liquids and Solids:931.2
WOS关键词	LOW-TEMPERATURE ; CARBON NANOTUBE ; SOL-GEL ; WETTABILITY ; FABRICATION ; ELECTRODES ; CIRCUIT ; SURFACE
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20896
专题	物质科学与技术学院物质科学与技术学院_硕士生
通讯作者	Chen, Zheng; Zhao, Jianwen
作者单位	1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Printable Elect Res Ctr, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China 2.Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China 3.Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Joint Int Res Lab Carbon Based Funct Mat & Device, 199 Renai Rd, Suzhou 215123, Jiangsu, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Ceram, 585 Heshuo Rd, Shanghai 201899, Peoples R China 5.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China 6.Shanghai Tech Univ, Pudong New Area, 393 Huaxia Middle Rd, Shanghai 201210, Peoples R China
第一作者单位	上海科技大学
推荐引用方式 GB/T 7714	Zhang, Qing,Shao, Shuangshuang,Chen, Zheng,et al. High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(18):15847-15854.
APA	Zhang, Qing.,Shao, Shuangshuang.,Chen, Zheng.,Pecunia, Vincenzo.,Xia, Kai.,...&Cui, Zheng.(2018).High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.ACS APPLIED MATERIALS & INTERFACES,10(18),15847-15854.
MLA	Zhang, Qing,et al."High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure".ACS APPLIED MATERIALS & INTERFACES 10.18(2018):15847-15854.