| |||||||
ShanghaiTech University Knowledge Management System
High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure | |
2018-05-09 | |
发表期刊 | ACS APPLIED MATERIALS & INTERFACES (IF:8.3[JCR-2023],8.7[5-Year]) |
ISSN | 1944-8244 |
卷号 | 10期号:18页码:15847-15854 |
发表状态 | 已发表 |
DOI | 10.1021/acsami.8b02390 |
摘要 | A self-aligned inkjet printing process has been developed to construct small channel metal oxide (a-IGZO) thin-film transistors (TFTs) with independent bottom gates on transparent glass substrates. Poly(methylsilsesquioxane) was used to pattern hydrophobic banks on the transparent substrate instead of commonly used self-assembled octadecyltrichlorosilane. Photolithographic exposure from backside using bottom-gate electrodes as mask formed hydrophilic channel areas for the TFTs. IGZO ink was selectively deposited by an inkjet printer in the hydrophilic channel region and confined by the hydrophobic bank structure, resulting in the precise deposition of semiconductor layers just above the gate electrodes. Inkjet-printed IGZO TFTs with independent gate electrodes of 10 mu m width have been demonstrated, avoiding completely printed channel beyond the broad of the gate electrodes. The TFTs showed on/off ratios of 10(8), maximum mobility of 3.3 cm(2)V(-1)s(-1), negligible hysteresis, and good uniformity. This method is conductive to minimizing the area of printed TFTs so as to the development of high-resolution printing displays. |
关键词 | inkjet printing metal oxide surface-energy pattern self-aligned PMSQ |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[61750110517] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:000432205800059 |
出版者 | AMER CHEMICAL SOC |
EI入藏号 | 20182005198048 |
EI主题词 | Electrodes ; Hydrophilicity ; Hydrophobicity ; Ink jet printers ; Ink jet printing ; Metals ; Printing presses ; Refractory metal compounds ; Semiconducting indium compounds ; Substrates ; Thin film circuits ; Thin films |
EI分类号 | Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Printing:745.1 ; Printing Equipment:745.1.1 ; Organic Compounds:804.1 ; Physical Properties of Gases, Liquids and Solids:931.2 |
WOS关键词 | LOW-TEMPERATURE ; CARBON NANOTUBE ; SOL-GEL ; WETTABILITY ; FABRICATION ; ELECTRODES ; CIRCUIT ; SURFACE |
原始文献类型 | Article |
引用统计 | 正在获取...
|
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20896 |
专题 | 物质科学与技术学院 物质科学与技术学院_硕士生 |
通讯作者 | Chen, Zheng; Zhao, Jianwen |
作者单位 | 1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Printable Elect Res Ctr, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China 2.Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, Inst Optoelect & Nanomat, MIIT Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China 3.Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Joint Int Res Lab Carbon Based Funct Mat & Device, 199 Renai Rd, Suzhou 215123, Jiangsu, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Ceram, 585 Heshuo Rd, Shanghai 201899, Peoples R China 5.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China 6.Shanghai Tech Univ, Pudong New Area, 393 Huaxia Middle Rd, Shanghai 201210, Peoples R China |
第一作者单位 | 上海科技大学 |
推荐引用方式 GB/T 7714 | Zhang, Qing,Shao, Shuangshuang,Chen, Zheng,et al. High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(18):15847-15854. |
APA | Zhang, Qing.,Shao, Shuangshuang.,Chen, Zheng.,Pecunia, Vincenzo.,Xia, Kai.,...&Cui, Zheng.(2018).High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure.ACS APPLIED MATERIALS & INTERFACES,10(18),15847-15854. |
MLA | Zhang, Qing,et al."High-Resolution Inkjet-Printed Oxide Thin-Film Transistors with a Self-Aligned Fine Channel Bank Structure".ACS APPLIED MATERIALS & INTERFACES 10.18(2018):15847-15854. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。