Simulation of the multiplication zone for linear APD based on standard CMOS process

doi:10.11972/j.issn.1001-9014.2018.02.010

	Simulation of the multiplication zone for linear APD based on standard CMOS process
	Ju Guo-Hao1,2,3 ; Cheng Zheng-Xi 1; Chen Yong-Ping1 ; Zhong Yan-Ping 1,2
	2018-04
发表期刊	红外与毫米波学报 (IF:0.6[JCR-2023],0.5[5-Year])
ISSN	1001-9014
卷号	37 期号:2 页码:184-+
发表状态	已发表
DOI	10.11972/j.issn.1001-9014.2018.02.010
摘要	The doping distribution in the multiplication zone of n(+)-p-pi-p(+) structured linear avalanche photodiode (APD) based on standard CMOS process greatly determines the device performance. The influences of implanting dose and the depth of its peak concentration of the p-layer on device characteristics are simulated using Silvaco. The simulation results show that, at a given gain of 50, the optimized doping dose of P layer is 1.82 x 10(12)/cm(2) with depth of peak concentration 2.1 mu m. Under optimized conditions, the reverse bias voltage is 73.1 V, the excess noise factor is 4.59, and the excess noise index is 0.34 similar to 0.45 (lambda = 800 nm), which are better than those reported. The performance of the APD may be further improved through process optimization.
关键词	standard CMOS process linear APD doping distribution depth of peak concentration simulation
收录类别	SCI ; SCIE ; 北大核心 ; EI
语种	中文
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000431940200010
出版者	SCIENCE PRESS
EI入藏号	20183905875936
EI主题词	Optimization
EI分类号	Semiconductor Devices and Integrated Circuits:714.2 ; Optimization Techniques:921.5
WOS关键词	AVALANCHE PHOTODIODES ; HIGH-SPEED ; DESIGN
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20860
专题	信息科学与技术学院信息科学与技术学院_特聘教授组_陈永平组信息科学与技术学院_硕士生
通讯作者	Chen Yong-Ping
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Ju Guo-Hao,Cheng Zheng-Xi,Chen Yong-Ping,et al. Simulation of the multiplication zone for linear APD based on standard CMOS process[J]. 红外与毫米波学报,2018,37(2):184-+.
APA	Ju Guo-Hao,Cheng Zheng-Xi,Chen Yong-Ping,&Zhong Yan-Ping.(2018).Simulation of the multiplication zone for linear APD based on standard CMOS process.红外与毫米波学报,37(2),184-+.
MLA	Ju Guo-Hao,et al."Simulation of the multiplication zone for linear APD based on standard CMOS process".红外与毫米波学报 37.2(2018):184-+.