Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study

doi:10.1103/PhysRevB.97.174420

	Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study
	Yang, Junting1,2,3 ; Yan, Jiawei1,2,3 ; Wang, Shizhuo 4; Ke, Youqi1,2,3
	2018-05-21
发表期刊	PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year])
ISSN	2469-9950
卷号	97 期号:17
发表状态	已发表
DOI	10.1103/PhysRevB.97.174420
摘要	We report first-principles study of shot noise and tunneling magnetoresistance in Fe/MgO/Fe- /MgO/Fe double-barrier magnetic tunnel junctions (MTJs). We mainly investigate the effects of disordered interfacial oxygen vacancies and barrier asymmetry on the spin-dependent tunneling. It is found that interchannel scattering induced by interfacial oxygen vacancies can substantially enhance the tunneling conductance of the antiparallel magnetic configurations, and results in the dramatic decrease of tunneling magnetoresistance. Moreover, we find the interfacial disorder scattering favors the sub-Poissonian tunneling process. As a result, Fano factors of symmetric MTJs maintain at around 0.5, or are suppressed, while Fano factors of asymmetric MTJs can all be significantly suppressed, illustrating the important correlations in tunneling induced by interfacial disorders. Interchannel scattering induced by interfacial oxygen vacancies can effectively couple the electron to high-transmission channels, enhancing the transmission and reducing the shot noise. In comparison with interfacial disorder, middle-layer disordered Fe vacancies present limited modulation on the Fano factor. Increasing the asymmetry of barriers can quickly decrease high-transmission channels, and make the tunneling process Poissonian in double-barrier MTJs.
收录类别	SCI ; SCIE ; EI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000433011500003
出版者	AMER PHYSICAL SOC
EI入藏号	20191906875307
EI主题词	Magnesia ; Magnetic devices ; Oxygen vacancies ; Scanning tunneling microscopy ; Tunnel junctions ; Tunnelling magnetoresistance
EI分类号	Magnetism: Basic Concepts and Phenomena:701.2 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1
WOS关键词	ROOM-TEMPERATURE ; SINGLE ; DIODE
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20832
专题	物质科学与技术学院物质科学与技术学院_PI研究组_柯友启组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Ke, Youqi
作者单位	1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Div Condensed Matter Phys & Photon Sci, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Zhengzhou Univ Light Ind, Coll Phys & Elect Engn, Zhengzhou 450002, Henan, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Yang, Junting,Yan, Jiawei,Wang, Shizhuo,et al. Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study[J]. PHYSICAL REVIEW B,2018,97(17).
APA	Yang, Junting,Yan, Jiawei,Wang, Shizhuo,&Ke, Youqi.(2018).Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study.PHYSICAL REVIEW B,97(17).
MLA	Yang, Junting,et al."Shot noise and tunneling magnetoresistance in disordered MgO-based double-barrier magnetic tunnel junctions: First-principles study".PHYSICAL REVIEW B 97.17(2018).