Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

doi:10.1088/0256-307X/35/4/047302

	Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates
	Zhu, Lei1,2,3 ; Chang, Yong-Wei 1,3; Gao, Nan 1,3; Su, Xin 1,3; Dong, YeMin 1,3; Fei, Lu 1,3,4; Wei, Xing 1,4; Wang, Xi1,2,3
	2018-04
发表期刊	CHINESE PHYSICS LETTERS (IF:3.5[JCR-2023],2.1[5-Year])
ISSN	0256-307X
卷号	35 期号:4
发表状态	已发表
DOI	10.1088/0256-307X/35/4/047302
摘要	Crystal morphologies and resistivity of polysilicon trap-rich layers of two generation trap-rich silicon-on-insulator (TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2 (TR-G2) is higher than that of generation 1 (TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon (HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.
收录类别	SCI ; SCIE ; EI ; CSCD
语种	英语
资助项目	Program of Shanghai Academic/Technology Research Leader[17XD1424500]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000430567000026
CSCD记录号	CSCD:6213945
出版者	IOP PUBLISHING LTD
WOS关键词	CPW LINES ; SI ; FILMS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20828
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_王曦组物质科学与技术学院_博士生
通讯作者	Wei, Xing
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Shanghaitech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Shanghai Simgui Technol Co Ltd, Shanghai 201815, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhu, Lei,Chang, Yong-Wei,Gao, Nan,et al. Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates[J]. CHINESE PHYSICS LETTERS,2018,35(4).
APA	Zhu, Lei.,Chang, Yong-Wei.,Gao, Nan.,Su, Xin.,Dong, YeMin.,...&Wang, Xi.(2018).Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates.CHINESE PHYSICS LETTERS,35(4).
MLA	Zhu, Lei,et al."Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates".CHINESE PHYSICS LETTERS 35.4(2018).