Reduction of Reset Current in Phase Change Memory by Pre-Programming

doi:10.1149/2.0161602jss

	Reduction of Reset Current in Phase Change Memory by Pre-Programming
	Wang, Yueqing 1,2,3; Cai, Daolin 1,2; Chen, Yifeng 1,2; Wang, Yuchan 1,2,3; Wei, Hongyang 1,2,3; Huo, Ruru1,2,4 ; Chen, Xiaogang 1,2; Song, Zhitang 1,2
	2016
发表期刊	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (IF:1.8[JCR-2023],2.0[5-Year])
ISSN	2162-8769
卷号	5 期号:2 页码:Q13-Q16
发表状态	已发表
DOI	10.1149/2.0161602jss
摘要	Since RESET current has been a significant obstacle to achieving high density and low power consumption for phase change memory (PCM), a pre-programming method is proposed to reduce the RESET current based on the control of active area size. The pre-programming method is made of a high current RESET pulse and a DC SET pulse. The test results gathered across a 1 Kbits block of a 64 M bits PCM test chip in 40 nm CMOS process show that a maximum RESET current reduction of 0.3 mA is achieved by the proposed method. The increase of active area size of face centered cubic (FCC) phase GST is taken as the major reason for the reduction of RESET current, which is confirmed by transmission electron microscope (TEM) and a two-dimensional finite analysis. (C) 2015 The Electrochemical Society. All rights reserved.
收录类别	SCI ; EI
语种	英语
资助项目	Science and Technology Council of Shanghai[12nm0503701] ; Science and Technology Council of Shanghai[13DZ2295700] ; Science and Technology Council of Shanghai[12QA1403900] ; Science and Technology Council of Shanghai[13ZR1447200] ; Science and Technology Council of Shanghai[14ZR1447500]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000365748800025
出版者	ELECTROCHEMICAL SOC INC
EI入藏号	20155101702701
EI主题词	CMOS integrated circuits ; Transmission electron microscopy
EI分类号	Semiconductor Devices and Integrated Circuits:714.2 ; Data Storage, Equipment and Techniques:722.1
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2065
专题	物质科学与技术学院物质科学与技术学院_硕士生
通讯作者	Wang, Yueqing
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Nanotechnol Lab, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100080, Peoples R China 4.Shanghaitech Univ, Shanghai 200031, Peoples R China
推荐引用方式 GB/T 7714	Wang, Yueqing,Cai, Daolin,Chen, Yifeng,et al. Reduction of Reset Current in Phase Change Memory by Pre-Programming[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2016,5(2):Q13-Q16.
APA	Wang, Yueqing.,Cai, Daolin.,Chen, Yifeng.,Wang, Yuchan.,Wei, Hongyang.,...&Song, Zhitang.(2016).Reduction of Reset Current in Phase Change Memory by Pre-Programming.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,5(2),Q13-Q16.
MLA	Wang, Yueqing,et al."Reduction of Reset Current in Phase Change Memory by Pre-Programming".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 5.2(2016):Q13-Q16.