ShanghaiTech University Knowledge Management System
| Preparation of high-purity SiC ceramics with good plasma corrosion resistance by hot-pressing sintering | |
| 2022-10-15 | |
| 发表期刊 | CERAMICS INTERNATIONAL (IF:5.1[JCR-2023],4.7[5-Year]) |
| ISSN | 0272-8842 |
| EISSN | 1873-3956 |
| 卷号 | 48期号:20 |
| 发表状态 | 已发表 |
| DOI | 10.1016/j.ceramint.2022.06.263 |
| 摘要 | High-purity SiC ceramic devices are applied in semiconductor industry owing to their outstanding properties. Nevertheless, it is difficult to densify SiC ceramics without any sintering additive even by HP sintering. In this work, high-purity and dense SiC ceramics were fabricated by HP sintering with very low amounts of sintering aids. Residual B content was only 556 ppm and relative density was more than 99.5%. Furthermore, thermal conductivity of as-prepared SiC ceramics was improved from 155 W m−1 K−1 to 167 W m−1 K−1 by increasing holding time and their plasma corrosion resistance was promoted in the meantime. The as-prepared high-purity SiC ceramics have broad application prospects in the field of semiconductor industry. © 2022 |
| 关键词 | Additives Corrosion resistance Hot pressing Semiconductor device manufacture Sintering Thermal conductivity Wide band gap semiconductors Ceramic devices High purity High thermal conductivity High-purity SiC Hot pressing sintering HP sintering Plasma corrosion resistance Property Semiconductor industry SiC ceramics |
| URL | 查看原文 |
| 收录类别 | EI ; SCI |
| 语种 | 英语 |
| 资助项目 | National Key Research and Development Project[2021YFB3701500] ; Research instrument development project of Chinese Academy of Sciences[YZQT014] |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Ceramics |
| WOS记录号 | WOS:000917705300001 |
| 出版者 | Elsevier Ltd |
| EI入藏号 | 20222812347633 |
| EI主题词 | Silicon carbide |
| EI分类号 | 539.1 Metals Corrosion ; 641.1 Thermodynamics ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 803 Chemical Agents and Basic Industrial Chemicals ; 804.2 Inorganic Compounds |
| 原始文献类型 | Article in Press |
| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/206326 |
| 专题 | 物质科学与技术学院_博士生 物质科学与技术学院_特聘教授组_黄政仁组 |
| 通讯作者 | Huang, Zhengren; Yang, Yong |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 4.Wuhan Huazhong Univ Sci & Technol Testing Technol, Wuhan 430074, Peoples R China |
| 第一作者单位 | 物质科学与技术学院 |
| 通讯作者单位 | 物质科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Liu, Meng,Liu, Huan,Ma, Ningning,et al. Preparation of high-purity SiC ceramics with good plasma corrosion resistance by hot-pressing sintering[J]. CERAMICS INTERNATIONAL,2022,48(20). |
| APA | Liu, Meng.,Liu, Huan.,Ma, Ningning.,Liu, Yingying.,Liu, Xuejian.,...&Yang, Yong.(2022).Preparation of high-purity SiC ceramics with good plasma corrosion resistance by hot-pressing sintering.CERAMICS INTERNATIONAL,48(20). |
| MLA | Liu, Meng,et al."Preparation of high-purity SiC ceramics with good plasma corrosion resistance by hot-pressing sintering".CERAMICS INTERNATIONAL 48.20(2022). |
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