Pristine PN junction toward atomic layer devices

doi:10.1038/s41377-022-00814-8

	Pristine PN junction toward atomic layer devices
	Xia, Hui 1,2; Luo, Man 3; Wang, Wenjing 1,2; Wang, Hailu 1,2; Li, Tianxin 1,2; Wang, Zhen 1,2; Xu, Hangyu 1,2; Chen, Yue 1,2; Zhou, Yong 1,2; Wang, Fang 1,2; Xie, Runzhang 1,2; Wang, Peng 1,2; Hu, Weida 1,2; Lu, Wei1,2,4
	2022-12
发表期刊	LIGHT-SCIENCE & APPLICATIONS (IF:20.6[JCR-2023],20.3[5-Year])
ISSN	2047-7538
EISSN	2047-7538
卷号	11 期号:1
发表状态	已发表
DOI	10.1038/s41377-022-00814-8
摘要	In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a brand-new junction architecture, called "layer PN junction", that might break through such limit and help redefine the semiconductor device architecture. Different from all existing semiconductors, we find that a variety of van der Waals materials are doping themselves from n- to p-type conductance with an increasing/decreasing layer-number. It means the capability of constructing homogeneous PN junctions in monolayers' dimension/precision, with record high rectification-ratio (>10(5)) and low cut-off current (<1 pA). More importantly, it spawns intriguing functionalities, like gate-switchable-rectification and noise-signal decoupled avalanching. Findings disclosed here might open up a path to develop novel nanodevice applications, where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.
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收录类别	SCI ; EI ; SCIE
语种	英语
资助项目	National Natural Science Foundation of China[11991063,62004207,61725505,62104118] ; Shanghai Science and Technology Committee["2019SHZDZX01","19XD1404100","20YF1455900","20ZR1474000"] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB43010200]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000806121400001
出版者	SPRINGERNATURE
Scopus 记录号	2-s2.0-85131240416
来源库	Scopus
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/195059
专题	物质科学与技术学院_特聘教授组_陆卫组
通讯作者	Li, Tianxin; Hu, Weida; Lu, Wei
作者单位	1.State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai,200083,China 2.University of Chinese Academy of Sciences,Beijing,100049,China 3.Jiangsu Key Laboratory of ASIC Design,School of Information Science and Technology,Nantong University,Nantong,Jiangsu,226019,China 4.School of Physical Science and Technology,ShanghaiTech University,Shanghai,201210,China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Xia, Hui,Luo, Man,Wang, Wenjing,et al. Pristine PN junction toward atomic layer devices[J]. LIGHT-SCIENCE & APPLICATIONS,2022,11(1).
APA	Xia, Hui.,Luo, Man.,Wang, Wenjing.,Wang, Hailu.,Li, Tianxin.,...&Lu, Wei.(2022).Pristine PN junction toward atomic layer devices.LIGHT-SCIENCE & APPLICATIONS,11(1).
MLA	Xia, Hui,et al."Pristine PN junction toward atomic layer devices".LIGHT-SCIENCE & APPLICATIONS 11.1(2022).